MBM29DL32XTE Fujitsu Microelectronics, Inc., MBM29DL32XTE Datasheet
MBM29DL32XTE
Related parts for MBM29DL32XTE
MBM29DL32XTE Summary of contents
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... FLASH MEMORY CMOS 32M (4M 8/2M MBM29DL32XTE/BE DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3 supply. 12 and 5 reprogrammed in standard EPROM programmers ...
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... In the MBM29DL32XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under this concept, the MBM29DL32XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size combinations; 0.5 Mb/31.5 Mb, 4 Mb/28 Mb, 8 Mb/24 Mb, 16 Mb/16 Mb. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls ...
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... Sector Group Protection Set function by Extended sector group protection command • Fast Programming Function by Extended Command • Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash Memory Interface Embedded Erase and Embedded Program MBM29DL32XTE/BE 2 PROMs TM are trademarks of Advanced Micro Devices, Inc. -80/90/12 3 ...
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... MBM29DL32XTE/BE Table 1 Device Organization Part Number MBM29DL321TE/BE MBM29DL322TE/ MBM29DL323TE/BE MBM29DL324TE/BE 4 -80/90/12 MBM29DL32XTE/BE Device Bank Divisions Bank 1 Megabits Sector sizes 0.5 Mbit Eight 8K byte/4K word Eight 8K byte/4K word, 4 Mbit seven 64K byte/32K word Eight 8K byte/4K word, 8 Mbit fifteen 64K byte/32K word Eight 8K byte/4K word, ...
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... WP/ACC 14 N.C. 13 RESET MBM29DL32XTE/BE TSOP( (Marking Side) BYTE Standard Pinout ...
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... MBM29DL32XTE/BE (Continued N.C. N. N.C. N. RY/ N. N.C. N.C. *: Peripheral Balls on each corner are shorted together via substrate but not connected to the die. A1 N.C. A2 N.C. — B1 N.C. — — — — — — — — ...
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... BLOCK DIAGRAM Bank 2 Address RESET State WE Control CE & OE Command BYTE Register WP/ACC Bank 1 Address MBM29DL32XTE/BE Cell Matrix (Bank 2) X-Decoder RY/BY Status Control X-Decoder Cell Matrix (Bank 1) -80/90/ ...
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... MBM29DL32XTE/BE LOGIC SYMBOL RY/BY WE RESET BYTE WP/ACC 8 -80/90/12 Table 2 MBM29DL32XTE/BE Pin Configuration Pin Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/Temporary Sector ...
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... DEVICE BUS OPERATION Table 3 MBM29DL32XTE/BE User Bus Operations (BYTE = V Operation Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Group Protection (2), (4) Verify Sector Group Protection (2), (4) Temporary Sector Group Unprotection (5) Reset (Hardware) / Standby Boot Block Sector Write Protection ...
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... MBM29DL32XTE/BE Table 5 MBM29DL32XTE/BE Command Definitions First bus Bus Command write write cycle sequence cycles req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXh Read/Reset Byte Word 555h 3 Read/Reset AAAh Byte Word 555h 3 Autoselect AAAh ...
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... Boot Type) 29DL32XBE (Bottom Boot Type The system should generate the following address patterns: Word Mode: 555h or 2AAh to addresses A Byte Mode: AAAh or 555h to addresses A 9. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. MBM29DL32XTE/ ...
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... MBM29DL32XTE/BE In case of applying since both Bank 1 and Bank 2 enters Autoselect mode, the simultaneous operation ID 9 can not be executed. Table 6.1 MBM29DL321TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL321TE Word Device Code Byte MBM29DL321BE Word Sector Group Protection * for Byte mode ...
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... Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. Table 6.6 Expanded Autoselect Code Table Type Code Manufacturer’s Code 04h (B) 50h A MBM29DL323TE (W) 2250h 0 Device Code (B) 53h A MBM29DL323BE (W) 2253h 0 Sector Group Protection 01h (B) : Byte mode (W) : Word mode MBM29DL32XTE/ ...
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... MBM29DL32XTE/BE Table 6.7 MBM29DL324TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL324TE Word Device Code Byte MBM29DL324BE Word Sector Group Protection * for Byte mode. -1 *2: Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... SA30 SA31 SA32 SA33 SA34 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 00000h to 0FFFFh 64/32 10000h to 1FFFFh 64/32 20000h to 2FFFFh 64/32 ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 ...
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... SA39 SA38 SA37 SA36 SA35 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 3F0000h to 3FFFFFh 64/32 3E0000h to 3EFFFFh 64/32 3D0000h to 3DFFFFh 64/32 ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA34 SA33 SA32 SA31 SA30 SA29 SA28 SA27 SA26 SA25 ...
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... SA30 SA31 SA32 SA33 SA34 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 000000h to 00FFFFh 64/32 010000h to 01FFFFh 64/32 020000h to 02FFFFh 64/32 ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 ...
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... SA39 SA38 SA37 SA36 SA35 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 3F0000h to 3FFFFFh 64/32 3E0000h to 3EFFFFh 64/32 3D0000h to 3DFFFFh 64/32 ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA34 SA33 SA32 SA31 SA30 SA29 SA28 SA27 SA26 SA25 ...
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... SA30 SA31 SA32 SA33 SA34 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 000000h to 00FFFFh 64/32 010000h to 01FFFFh 64/32 020000h to 02FFFFh 64/32 ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA35 SA36 SA37 SA38 SA39 SA40 Bank 2 SA41 SA42 SA43 SA44 ...
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... SA39 SA38 SA37 SA36 SA35 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 3F0000h to 3FFFFFh 64/32 3E0000h to 3EFFFFh 64/32 3D0000h to 3DFFFFh 64/32 ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA34 SA33 SA32 SA31 SA30 SA29 Bank 2 SA28 SA27 SA26 SA25 ...
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... SA31 SA32 Bank 1 SA33 SA34 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 000000h to 00FFFFh 64/32 010000h to 01FFFFh 64/32 020000h to 02FFFFh ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 ...
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... SA38 SA37 Bank 1 SA36 SA35 MBM29DL32XTE/BE Sector size (Kbytes/ Address range Kwords 64/32 3F0000h to 3FFFFFh 64/32 3E0000h to 3EFFFFh 64/32 3D0000h to 3DFFFFh ...
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... MBM29DL32XTE/BE (Continued) Sector address Bank Sector Bank address SA34 SA33 SA32 SA31 SA30 SA29 SA28 SA27 SA26 SA25 ...
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... Table 11.1 Sector Group Addresses (MBM29DL32XTE) Sector group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 ...
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... MBM29DL32XTE/BE Table 11.2 Sector Group Addresses (MBM29DL32XBE) Sector group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 0 0 SGA8 0 0 SGA9 0 0 SGA10 0 0 SGA11 0 0 SGA12 0 1 SGA13 0 1 SGA14 0 1 SGA15 ...
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... Not Supported, 0000h D7-4: V, D3-0: 100 mV 0000h ACC (Acceleration) Supply 0000h Maximum 0002h 00h = Not Supported, D7-4: V, D3-0: 100 mV 0007h Boot Type 02h = MBM29DL32XBE 0000h 03h = MBM29DL32XTE 0020h 0000h Program Suspend 00h = Not Supported, 003Eh 01h = Supported 0000h 0000h 0001h -80/90/ ...
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... An erase operation may also be supended to read from or program to a sector not being erased. • Read Mode The MBM29DL32XTE/BE have two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected ...
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... Standby Mode There are two ways to implement the standby mode on the MBM29DL32XTE/BE devices, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V Under this condition the current consumed is less than 5 A Max ...
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... Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. • Sector Group Protection The MBM29DL32XTE/BE feature hardware sector group protection. This feature will disable both program and erase operations in any combination of twenty five sector groups of memory. (See Tables 11.1 and 11.2). The sector group protection feature is enabled using programming equipment at the user’ ...
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... RESET Hardware Reset The MBM29DL32XTE/BE devices may be reset by driving the RESET pin to V requirement and has to be kept low (V Any operation in the process of being executed will be terminated and the internal state machine will be reset to the read mode “t ” after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the READY devices require an additional “ ...
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... MBM29DL32XTE/BE COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the read mode. Some commands are required Bank Address (BA) input. When command sequences are inputted to bank being read, the commands have priority than reading ...
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... which happens first. After time-out of “t ” from the rising edge of the last sector erase command, the sector erase operation will begin. TOW MBM29DL32XTE/BE is equivalent to data written to this 7 TM Algorithm using typical command strings and bus operations ...
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... MBM29DL32XTE/BE Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table 5. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than “t erasure will start recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of “ ...
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... Extended Command (1) Fast Mode MBM29DL32XTE/BE has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... On power-up, or following a hardware reset, the device reverts to sending commands to the boot sectors. • Hidden ROM (Hi-ROM) Entry Command MBM29DL32XTE/BE has a Hidden ROM area with One Time Protect function. This area is to enter the security code and to unable the change of the code once set. Program/erase is possible in this area until it is protected. ...
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... Embedded Algorithm. When the read sequence is [1] <busy bank>, [2] <non-busy bank>, [3] <busy bank>, the DQ memory cell is outputted. In the erase-suspend read mode with the same read sequence the [1] and [3]. In the erase suspend read mode, DQ outputted. MBM29DL32XTE/ (0,1,0), and write the sector group 6 1 ...
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... DQ 7 Data Polling The MBM29DL32XTE/BE devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the devices will produce the complement of the data last written to DQ Algorithm, an attempt to read the device will produce the true data last written to DQ Erase Algorithm, an attempt to read the device will produce a “ ...
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... DQ 6 Toggle Bit I The MBM29DL32XTE/BE also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...
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... RY/BY Ready/Busy The MBM29DL32XTE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation ...
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... Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29DL32XTE/BE devices. When this pin is driven high, the devices operate in the word (16-bit) mode. The data is read and programmed When this pin is driven low, the devices operate in byte (8-bit) mode. Under this mode, the DQ ...
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... V for periods ns. Voltage difference between input does not exceed 9.0 V. Maximum DC input voltage 0.5 V. During voltage transitions, WP/ACC pin may Conditions MBM29DL32XTE/BE- MBM29DL32XTE/BE-90/12 MBM29DL32XTE/BE- MBM29DL32XTE/BE-90/12 Rating Unit Min. Max. –55 +125 °C –40 +85 °C –0.5 V +0.5 ...
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... MAXIMUM OVERSHOOT / UNDERSHOOT +0.6 V –0.5 V –2.0 V Figure 1 Maximum Undershoot Waveform +2.0 V Figure 2 Maximum Overshoot Waveform 1 +14.0 V +13 +0 This waveform is applied for A Figure 3 Maximum Overshoot Waveform 2 MBM29DL32XTE/ OE, and RESET. 9 -80/90/12 49 ...
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... MBM29DL32XTE/BE ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage Current 9 V Active Current (Note Active Current (Note Current (Standby Current (Standby, Reset Current CC (Automatic Sleep Mode) (Note 3) V Active Current (Note 5) ...
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... READY t ELFL — BYTE Switching Low or High t ELFH Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29DL32XTE/BE-80) 1 TTL gate and 100 pF (MBM29DL32XTE/BE-90/12) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output:1.5 V Device ...
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... MBM29DL32XTE/BE • Write/Erase/Program Operations Parameter symbols JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVWL AS Address Setup Time to OE Low During — t ASO Toggle Bit Polling t t Address Hold Time WLAX AH Address Hold Time from High — ...
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... Delay Time from Embedded Output Enable Max. EOE — t Erase Time-Out Time TOW — t Erase Suspend Transition Time SPD Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Group Protection operation. MBM29DL32XTE/BE Description Min. Min. Min. Min. Max. Max. Max. Min. Max. -80/90/12 ...
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... MBM29DL32XTE/BE ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle PIN CAPACITANCE Parameter Parameter description symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 C WP/ACC Pin Capacitance IN3 Note: Test conditions T = 25° ...
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... TIMING DIAGRAM • Key to Switching Waveforms WAVEFORM Address OEH WE High-Z Outputs Figure 5.1 AC Waveforms for Read Operations MBM29DL32XTE/BE INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” ...
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... MBM29DL32XTE/BE Address RESET Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations 56 -80/90/ Address Stable t ACC High Output Valid ...
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... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 6 AC Waveforms for Alternate WE Controlled Program Operations MBM29DL32XTE/BE Data Polling ...
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... MBM29DL32XTE/BE Address Data Notes address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. ...
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... VCS the sector address for Sector Erase. Addresses = 555h (Word), AAAh (Byte) for Chip Erase. Note: These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 AC Waveforms for Chip/Sector Erase Operations MBM29DL32XTE/BE 2AAh 555h 555h ...
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... MBM29DL32XTE/ Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations 60 -80/90/ OEH WHWH1 Output Flag High-Z ...
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... Toggle DQ /DQ Data 6 2 Data t BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 Figure 10 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations MBM29DL32XTE/ ASO AHT AS t CEPH t OEH Stop Toggle Toggle Toggling Data Data ...
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... MBM29DL32XTE/BE Read t RC Address BA1 Valid DQ Output Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address of Bank 1. BA2: Address of Bank 2. Figure 11 Bank-to-bank Read/Write Timing Diagram Enter Erase Embedded Suspend Erasing WE Erase Toggle ...
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... CE WE RY/BY Figure 13 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY Figure 14 RESET, RY/BY Timing Diagram MBM29DL32XTE/BE The rising edge of the last write pulse Entire programming or erase operations t BUSY READY -80/90/12 63 ...
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... MBM29DL32XTE/BE CE BYTE ELFH Figure 15 Timing Diagram for Word Mode Configuration CE BYTE t ELFL Figure 16 Timing Diagram for Byte Mode Configuration BYTE Figure 17 BYTE Timing Diagram for Write Operations 64 -80/90/ Data Output Data Output ...
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... WE t CSP CE Data t VCS V CC SGAX: Sector Group Address for initial sector SGAY : Sector Group Address for next sector Note byte mode Figure 18 AC Waveforms for Sector Group Protection MBM29DL32XTE/ VLHT VLHT t WPP t OESP -80/90/12 SGAY 01h ...
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... MBM29DL32XTE/ VIDR t VCS RESET CE WE RY/BY Figure 19 Temporary Sector Group Unprotection Timing Diagram 66 -80/90/12 t Program or Erase Command Sequence VLHT Unprotection period t VLHT VLHT ...
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... Data 60h SGAX: Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window = 250 s (Min.) Figure 20 Extended Sector Group Protection Timing Diagram MBM29DL32XTE/ SGAX TIME-OUT 40h 60h -80/90/12 SGAX SGAY 60h 01h t OE ...
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... MBM29DL32XTE/ VACCR t VCS V ACC 3 V WP/ACC CE WE RY/BY Figure 21 Accelerated Program Timing Diagram 68 -80/90/12 t Program or Erase Command Sequence VLHT Acceleration period t VLHT VLHT ...
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... FLOW CHART EMBEDDED ALGORITHMS Increment Address * : The sequence is applied for The addresses differ from 8 mode. Figure 22 Embedded Program MBM29DL32XTE/BE Start Write Program Command Sequence (See below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555h/AAh 2AAh/55h 555h/A0h Program Address/Program Data 16 mode ...
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... MBM29DL32XTE/BE EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command): 555h/AAh 2AAh/55h 555h/AAh 2AAh/55h * : The sequence is applied for The addresses differ from 70 -80/90/12 Start Write Erase Command Sequence (See below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector* Erase Command Sequence ...
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... Addr Fail Note rechecked even Figure 24 Data Polling Algorithm MBM29DL32XTE/ Byte address for programming 7 = Any of the sector addresses within the sector being erased during Yes sector erase or multiple sector = Data? erases operation = Any of the sector addresses within ...
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... MBM29DL32XTE/BE Note rechecked even changing to “1” -80/90/12 Start Read ( Bank address being executed 0 7 Addr Toggle 6 ? Yes Yes Read ( Addr Toggle 6 ? Yes Fail Pass = “1” because DQ may stop toggling at the same time as ...
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... Increment PLSCNT No PLSCNT = 25? Yes Remove V from A ID Write Reset Command Device Failed * : byte mode Figure 26 Sector Group Protection Algorithm MBM29DL32XTE/BE Start Setup Sector Group Addr PLSCNT = ...
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... MBM29DL32XTE/BE Notes: 1. All protected sector groups are unprotected. 2. All previously protected sector groups are protected once again. Figure 27 Temporary Sector Group Unprotection Algorithm 74 -80/90/12 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Group Unprotection Completed (Note 2) ...
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... FAST MODE ALGORITHM Increment Address Note: The sequence is applied for The addresses differ from Figure 28 Embedded Program MBM29DL32XTE/BE Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes Programming Completed (BA) XXXh/90h XXXh/F0h 16 mode. 8 mode. ...
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... MBM29DL32XTE/BE Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 29 Extended Sector Group Protection Algorithm 76 -80/90/12 Start RESET = V ID Wait Extended Sector Group Protection Entry? Yes To Setup Sector Group ...
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... V-only Read, Program, and Erase Valid Combinations MBM29DL321TE/BE 80 MBM29DL322TE/BE 90 MBM29DL323TE/BE 12 MBM29DL324TE/BE MBM29DL32XTE/ PACKAGE TYPE TN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout TR = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout PBT = Fine pitch Ball Grid Array Package (FBGA) SPEED OPTION ...
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... MBM29DL32XTE/BE PACKAGE DIMENSIONS 48-pin plastic TSOP(I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 2000 FUJITSU LIMITED F48029S-3c-4 C 48-pin plastic TSOP(I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00± ...
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... FBGA (BGA-63P-M01) 11.00±0.10(.433±.004) INDEX AREA 0.10(.004) 1999 FUJITSU LIMITED B63001S-1C-1 C MBM29DL32XTE/BE +0.15 1.05 –0.10 +.006 .041 –.004 (Mounting height) 0.38±0.10 (.015±.004) (Stand off) (4.00(.157)) 7.00±0.10 (.276±.004) (5.60(.220 -80/90/12 (8.80(.346)) (7.20(.283)) (5.60(.220)) 0.80(.031)TYP ...
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... MBM29DL32XTE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS, INC. ...