VCR2N Vishay, VCR2N Datasheet

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VCR2N

Manufacturer Part Number
VCR2N
Description
Jfet Voltage-controlled Resistors
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
VCR2N
Manufacturer:
VISHAY
Quantity:
9 200
Price:
DESCRIPTION
The VCR2N/4N/7N JFET voltage controlled resistors have an
ac drain-source resistance that is controlled by a dc bias
voltage (V
Minimum r
pinch-off voltage, r
FETs is intended for applications where the drain-source
voltage is a low-level ac signal with no dc component.
For applications information see AN105.
Document Number: 70293
S-41225—Rev. F, 28-Jun-04
PRODUCT SUMMARY
FEATURES
D Continuous Voltage-Controlled
D High Off-Isolation
D High Input Impedance
Part Number
Resistance
VCR2N
VCR4N
VCR7N
GS
DS
) applied to their high impedance gate terminal.
occurs when V
DS
rapidly increases. This series of junction
V
D
S
GS(off)
VCR2N, VCR4N
1
2
GS
TO-206AA
ï7
ï7
ï5
Max (V)
(TO-18)
Top View
JFET Voltage-Controlled Resistors
= 0 V. As V
3
V
GS
(BR)GSS
approaches the
G and Case
BENEFITS
D Gain Ranging Capability/Wide Range
D No Circuit Interaction
D Simplified Drive
ï25
ï25
ï25
Signal Attenuation
Min (V)
r
DS(on)
Key to device performance is the predictable r
versus V
These n-channel devices feature r
8000 W . All packages are hermetically sealed and may be
processed per MIL-S-19500 (see Military Information).
8000
600
Max (W)
60
GS
bias where:
D
S
r
DS
bias [
1
2
TO-206AF
Top View
(TO-72)
VCR7N
r
DS
APPLICATIONS
D Variable Gain Amplifiers
D Voltage Controlled Oscillator
D AGC
1–
(@ V
V
3
V
GS(off)
4
GS
GS
Vishay Siliconix
+ 0)
C
VCR2N/4N/7N
DS(on)
G
ranging from 20 to
www.vishay.com
DS
change
1

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VCR2N Summary of contents

Page 1

... VCR4N ï7 VCR7N ï5 FEATURES D Continuous Voltage-Controlled Resistance D High Off-Isolation D High Input Impedance DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac drain-source resistance that is controlled bias voltage (V ) applied to their high impedance gate terminal. GS Minimum r occurs when pinch-off voltage, r rapidly increases ...

Page 2

... DS(on) Gate-Source Forward Voltage V GS(F) Dynamic Drain-Source On-Resistance r ds(on) Drain-Gate Capacitance C dg Source-Gate Capacitance C sg Notes: a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. TYPICAL CHARACTERISTICS (T Output Characteristics (VCR2N ï4 V GS(off ï0.5 V ï1 0.2 0.4 0.6 V ï Drain-Source Voltage (V) DS www ...

Page 3

... It is assumed that the output voltage is not so large as to push the VCR out of the linear resistance region, and that the r not shunted by the load. The lowest value which V V OUT VCR Since r DS VCR2N/4N/7N Vishay Siliconix = 0 V ï0.5 V ï1.0 V ï1.5 V ï2.0 V 0.8 1 ...

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