FX6ASJ-06 Renesas Electronics Corporation., FX6ASJ-06 Datasheet - Page 4

• Manufacturer Part Number: FX6ASJ-06
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-06
Rev.2.00
Aug 07, 2006
–20
–16
–12
–10
10
10
10
–8
–4
–8
–6
–4
–2
0
0
2
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
–3 –5–7
0
0
Transfer Characteristics (Typical)
Tch = 25°C
I
Gate-Source Voltage V
Drain-Source Voltage V
Drain-Source Voltage (Typical)
D
= –6A
–10
Gate-Source Voltage vs.
Gate Charge Qg (nC)
–2
Gate Charge (Typical)
4
0
–2
Capacitance vs.
–3 –5–7
page 4 of 6
–4
8
–10
1
12
–6
–2
Coss
–3 –5–7
Ciss
Tc = 25°C
V
Pulse Test
Crss
Tch = 25°C
f = 1MHz
V
DS
GS
GS
DS
–40V
16
–8
= –10V
= 0V
–20V
–10
V
–10V
(V)
(V)
DS
2
–2 –3
=
–10
20
10
–20
–16
–12
10
10
10
10
–8
–4
–1
–10
0
7
5
3
2
7
5
3
2
3
2
7
5
4
3
2
7
5
4
3
1
0
2
1
–5–7
0
Switching Characteristics (Typical)
–1
Forward Transfer Admittance vs.
V
Pulse Test
Source-Drain Voltage V
T
–10
C
Source-Drain Diode Forward
GS
25°C
–2 –3
=
–1
–0.4
Characteristics (Typical)
Drain Current (Typical)
–2
= 0V
Drain Current I
Drain Current I
–3 –5–7
75°C
–5 –7
–0.8
t
d(off)
t
–10
d(on)
125°C
–10
0
–2
t
Tch = 25°C
V
V
R
f
0
–1.2
GS
DD
GEN
–3 –5–7
–2 –3
= –10V
= –30V
D
D
= R
t
V
Pulse Test
r
25°C
Tc = 125°C
75°C
DS
(A)
(A)
GS
–10
–1.6
SD
= –5V
1
= 50Ω
–5 –7
–2 –3 –5
(V)
–2.0
–10
1