FX6ASJ-3 Renesas Electronics Corporation., FX6ASJ-3 Datasheet - Page 3

• Manufacturer Part Number: FX6ASJ-3
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-3
Performance Curves
Rev.2.00
Aug 07, 2006
–20
–16
–12
–20
–16
–12
50
40
30
20
10
–8
–4
–8
–4
0
0
0
0
0
0
Power Dissipation Derating Curve
Output Characteristics (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
Gate-Source Voltage (Typical)
Case Temperature Tc (°C)
V
GS
–4
–2
On-State Voltage vs.
50
= –10V
page 3 of 6
–8
–4
100
–5V
–6V
–12
–6
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
150
P
–16
GS
DS
I
–8
D
D
= –12A
= 35W
(V)
(V)
–4V
–3V
–6A
–3A
–20
–10
200
–10
–10
–10
–10
–10
1.0
0.8
0.6
0.4
0.2
–8
–6
–4
–2
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
–1
–10
0
0
2
1
0
–2 –3 –5–7
0
–1
Tc = 25°C
Single Pulse
Drain-Source Voltage V
Output Characteristics (Typical)
Drain-Source Voltage V
Tc = 25°C
Pulse Test
Maximum Safe Operating Area
–2
V
–10V
–3 –5–7
–6V
On-State Resistance vs.
GS
–2
Drain Current (Typical)
–10
Drain Current I
=
1
–10
–2
–4
–3 –5–7
0
–2
–3 –5–7
V
GS
–10
–4V
–5V
–6
= –4V
2
–3.5V
–10
–2
D
–3 –5–7
1
Tc = 25°C
Pulse Test
(A)
–2
P
DS
DS
–8
D
–10V
–3 –5–7
= 35W
–2.5V
–10
(V)
(V)
–3V
3
–10
–10
–2
2