IS64WV20488 Integrated Silicon Solution, Inc., IS64WV20488 Datasheet - Page 11

• Manufacturer Part Number: IS64WV20488
• Description: 2m X 8 High-speed Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS61WV20488ALL
IS61WV20488BLL
IS64WV20488BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. A
08/25/06
Symbol
output loading specified in Figure 1.
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write. Shaded area product in development
t
t
t
t
t
t
t
t
t
t
t
WC
SCE
AW
HA
PWE
PWE
SD
HD
HZWE
LZWE
SA
1
2
(2)
(2)
Parameter
Write Cycle Time
CE to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
WE Pulse Width (OE = HIGH)
WE Pulse Width (OE = LOW)
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
Min.
6.5
6.5
6.5
8.0
—
0
5
0
2
8
0
-8
1-800-379-4774
Max.
3.5
—
—
—
—
—
—
—
—
—
—
(1,3)
(Over Operating Range)
Min.
10
10
—
8
8
0
0
8
6
0
2
-10
Max.
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ISSI
11
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