AP601 WJ Communications, Inc., AP601 Datasheet

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AP601

Manufacturer Part Number
AP601
Description
High Dynamic Range 1.8w 28v Hbt Amplifier
Manufacturer
WJ Communications, Inc.
Datasheet

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WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Product Features
Applications
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
Absolute Maximum Rating
Operation of this device above any of these parameters may cause permanent damage.
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Parameter
Storage Temperature, T
Junction Temperature, T
RF Input Power (CW tone), P
Breakdown Voltage C-B, BV
Breakdown Voltage C-E, BV
Quiescent Bias Current, I
Power Dissipation, P
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
800 – 2400 MHz
+32.5 dBm P1dB
-51 dBc ACLR @ ¼W P
-55 dBc IMD3 @ ¼W PEP
17% Efficiency @ ¼W P
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 1W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
Mobile Infrastructure HPA
WiBro HPA
For 10
6
hours MTTF
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
DISS
stg
J
CQ
AVG
AVG
CEO
CBO
in
Units Min
MHz
MHz
dBm
dBm
dBc
dBc
mA
mA
mA
dB
dB
dB
%
V
V
Rating
-55 to +125 ºC
192 ºC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
80 mA
2.3 W
The AP601 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN
package. The single stage amplifier has 13.5 dB gain, while
being able to achieve high performance for 800-2400 MHz
applications with up to +32.5 dBm of compressed 1dB power.
The AP601 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP601 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
The AP601 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
800
+32.5
Typ
2140
13.5
+24
+28
-51
-55
Product Description
12
52
17
40
+5
8
1
Max
2200
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
2. The AP601 evaluation board has been tested for ruggedness to be capable of handling:
Ordering Information
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Part No.
AP601-F
AP601-PCB900
AP601-PCB1960 1930-1990 MHz Evaluation board
AP601-PCB2140 2110-2170 MHz Evaluation board
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout.
The device
Specifications and information are subject to change without notice
Description
High Dynamic Range 28V 1.8W HBT Amplifier
869-960 MHz Evaluation board
SMT
Functional Diagram
Units
-35
-40
-45
-50
-55
-60
MHz
dBm
dBm
dBc
dBc
mA
mA
dB
dB
dB
%
V
V
18
20 mA
40 mA
50 mA
ACLR1 vs. Output Power vs. Icq
Average Output Power (dBm)
20
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
+32.5
15.8
940
+24
-50
-51
13
52
17
7
Page 1 of 10 May 2007 ver 1
Typical
22
+32.7
1960
+24
+28
-49
-62
15
11
10
52
17
40
+5
24
+32.5
2140
13.5
+24
-51
-55
12
52
17
8
26

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AP601 Summary of contents

Page 1

... ACLR), but will decrease the efficiency performance slightly. More information is given in the other parts of this datasheet. 2. The AP601 evaluation board has been tested for ruggedness to be capable of handling: 7:1 VSWR @ +28 Vcc, 2140 MHz Pout, 5:1 VSWR @ +30 Vcc, 2140 MHz Pout, 3:1 VSWR @ +32 Vcc, 2140 MHz Pout ...

Page 2

... AP601 High Dynamic Range 1.8W 28V HBT Amplifier S-Parameters ( Gain / Maximum Stable Gain 40 DB(|S(2,1)|) -10 0 0.5 1 1.5 Frequency (GHz) The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency expected that actual gain will be higher the maximum stable gain. The maximum stable gain is shown in the marked red line. The impedance plots are shown from 50 – ...

Page 3

... Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq quiescent current setting. Ipd can 2mA at a quiescent current setting of 40mA. 3. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can 2mA on the AP601 ...

Page 4

... The center of C24 is placed at 0.285” (11.7°@ 940 MHz) from the edge of the AP601 (U1). 5. The center of C26 is placed at 0.055” (2.3° @ 940 MHz) from the edge of the AP601 (U1). 6. The center 0.095” (3.9° @ 940 MHz) from the center of C26. ...

Page 5

... The center placed at 0.085” (7.3° @ 1960 MHz) from the edge of the AP601 (U1). 5. The center of C19 is placed at 0.755” (64.5° @ 1960 MHz) from the edge of the AP601 (U1). 6. The center of C18 is placed at 0.300” (25.6° @ 1960 MHz) from the center of C19. ...

Page 6

... The center placed at 0.100” (9.3° @ 2140 MHz) from the edge of the AP601 (U1). 6. The center of C19 is placed at 0.760” (70.9° @ 2140 MHz) from the edge of the AP601 (U1). 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. ...

Page 7

... AP601 High Dynamic Range 1.8W 28V HBT Amplifier 2110-2170 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz -40 ˚ ˚C 85 ˚ ...

Page 8

... High Dynamic Range 1.8W 28V HBT Amplifier 2110-2170 MHz Application Note: Changing Icq Biasing Configurations The AP601 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended circuit configurations shown previously in this datasheet have the device operating with the quiescent current (I This biasing level represents the best tradeoff in terms of linearity and efficiency ...

Page 9

... Components shown on the silkscreen but not on the schematic are not used. 3. The center placed at 0.050” (5.1° @ 2.35 GHz) from the edge of the AP601 (U1). 4. The center of C19 is placed at 0.650” (66.6° @ 2.35 GHz) from the edge of the AP601 (U1). 5. The center of C30 is placed at 0.110” (11.3° @ 2.35 GHz) from the center of C19. ...

Page 10

... Junction Temperature (°C) Product Marking The component will be laser marked with a “AP601-F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ...

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