MSD42SW ON Semiconductor, MSD42SW Datasheet

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MSD42SW

Manufacturer Part Number
MSD42SW
Description
General Purpose High Voltage Transistor Npn Transistor
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MSD42SWT1G
Manufacturer:
ON
Quantity:
3 000
Part Number:
MSD42SWT1G
Manufacturer:
ON
Quantity:
30 000
MSD42SWT1
NPN Silicon General
Purpose High Voltage
Transistor
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter−Base Cutoff Current
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage
This NPN Silicon Planar Transistor is designed for general purpose
Pb−Free Package is Available
recommended footprint.
(I
(I
(I
(V
(V
(V
(V
(Note 2) (I
I
B
C
C
E
CB
EB
CE
CE
= 2.0 mAdc)
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, I
= 300 Vdc, I
= 6.0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
Characteristic
C
= 200 mAdc,
Rating
Rating
C
C
E
B
E
B
E
= 1.0 mAdc)
= 30 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0)
(T
A
= 25°C)
Preferred Device
V
V
V
V
V
V
Symbol
Symbol
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
(BR)CEO
(BR)CBO
(BR)EBO
I
I
h
h
CE(sat)
T
CBO
EBO
P
T
I
FE1
FE2
stg
C
D
J
−55 to +150
Min
300
300
6.0
25
40
Value
Max
300
300
150
150
150
6.0
Max
200
0.1
0.1
0.5
1
mAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
mW
Vdc
Vdc
Vdc
Vdc
mA
mA
°C
°C
MSD42SWT1
MSD42SWT1G SC−70/SOT−323
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
D4
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
SC−70/SOT−323 3000/Tape & Reel
SC−70 (SOT−323)
1
= Device Code
= Date Code*
= Pb−Free Package
1
COLLECTOR
(Pb−Free)
Package
CASE 419
STYLE 3
2
D4 M G
3
Publication Order Number:
G
3
EMITTER
3000/Tape & Reel
2
MSD42SWT1/D
Shipping

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MSD42SW Summary of contents

Page 1

... I − 0.1 CBO mA I − 0.1 EBO MSD42SWT1 − 200 MSD42SWT1G SC−70/SOT−323 FE1 h 40 − FE2 V − 0.5 Vdc CE(sat) †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com ...

Page 2

... BSC 0.425 REF 0.017 REF L H 2.00 2.10 2.40 0.079 0.083 E PIN 1. BASE 2. EMITTER 3. COLLECTOR mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MSD42SWT1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 ...

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