APT17N80SC3 Advanced Crystal Technology, APT17N80SC3 Datasheet - Page 5

• Manufacturer Part Number: APT17N80SC3
• Description: Super Junction Mosfet
• Manufacturer: Advanced Crystal Technology

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
V
DD
Figure 18, Turn-on Switching Waveforms and Definitions
Switching Energy
t
d(on)
10 %
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
Figure 20, Inductive Switching Test Circuit
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
5 %
TO-247 Package Outline
Dimensions in Millimeters and (Inches)
t
r
10 %
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
90%
6.15 (.242) BSC
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
I
C
5.45 (.215) BSC
D.U.T.
5 %
2-Plcs.
V
CE
15.49 (.610)
16.26 (.640)
Gate Voltage
Drain Current
Drain Voltage
G
APT15DF100
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
T J = 125 C
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Figure 19, Turn-off Switching Waveforms and Definitions
Drain Current
{3 Plcs}
D
1.22 (.048)
1.32 (.052)
3
PAK Package Outline
Dimensions in Millimeters (Inches)
90%
15.95 (.628)
16.05 (.632)
t
Revised
4/18/95
d(off)
Switching Energy
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
13.79 (.543)
13.99 (.551)
Drain
Source
1.04 (.041)
1.15 (.045)
1.27 (.050)
1.40 (.055)
90%
APT17N80BC3_SC3
t
f
Gate Voltage
Drain Voltage
10%
13.41 (.528)
13.51 (.532)
0
Revised
8/29/97
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
T
J
= 125 C
11.51 (.453)
11.61 (.457)