APT33N90JCCU2 Microsemi Corporation, APT33N90JCCU2 Datasheet - Page 4

no-image

APT33N90JCCU2

Manufacturer Part Number
APT33N90JCCU2
Description
Isotop Boost Chopper Super Junction Mosfet Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
1000
100000
100
10000
0.5
0.4
0.3
0.2
0.1
120
10
1000
0.00001
80
40
0
1
100
0
10
1
1
0
Low Voltage Output Characteristics
limited by R
Capacitance vs Drain to Source Voltage
0
V
0.05
0.9
0.7
0.1
0.5
0.3
V
Maximum Safe Operating Area
DS
V
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
DS
25
, Drain to Source Voltage (V)
DS
, Drain to Source Voltage (V)
Single pulse
T
T
, Drain to Source Voltage (V)
DS
J
C
=150°C
5
=25°C
50
on
10
0.0001
V
75 100 125 150 175 200
GS
=20, 8V
10
100
15
0.001
Coss
Crss
Ciss
100 µs
rectangular Pulse Duration (Seconds)
10 ms
www.microsemi.com
5V
6V
1000
20
Single Pulse
0.01
10
8
6
4
2
0
35
30
25
20
15
10
5
0
Gate Charge vs Gate to Source Voltage
0
1000
DC Drain Current vs Case Temperature
975
950
925
900
25
APT33N90JCCU2
V
I
T
D
J
DS
0.1
=26A
=25°C
25
Breakdown Voltage vs Temperature
=400V
50
T
C
T
50
, Case Temperature (°C)
J
, Junction Temperature (°C)
Gate Charge (nC)
100
50
75
150
1
75
100
200
100
125
250
10
125
150
300
4 – 5

Related parts for APT33N90JCCU2