APT26M100JCU3 Microsemi Corporation, APT26M100JCU3 Datasheet
APT26M100JCU3
Related parts for APT26M100JCU3
APT26M100JCU3 Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT26M100JCU3 V = 1000V DSS R = 330mΩ typ @ Tj = 25°C DSon I = 26A @ Tc = 25°C D Application • ...
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... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT26M100JCU3 = 25°C unless otherwise specified j Test Conditions T = 25°C V =1000V 125°C ...
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... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 0.0001 rectangular Pulse Duration (Seconds) APT26M100JCU3 W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) Anode Source Dimensions in Millimeters and (Inches) Single P ulse ...
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... =25° =500V =800V 120 160 200 240 280 320 Gate Charge (nC) www.microsemi.com APT26M100JCU3 Low Voltage Output Characteristics 40 T =125° = & Drain to Source Voltage (V) ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT26M100JCU3 Single Pulse 0.001 ...