APT10M11LV Advanced Crystal Technology, APT10M11LV Datasheet - Page 3

• Manufacturer Part Number: APT10M11LV
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets
• Manufacturer: Advanced Crystal Technology

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.00
1.75
1.50
1.25
1.00
0.75
0.50
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
200
160
120
200
160
120
120
100
80
40
80
40
80
60
40
20
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT10M11LVR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
-25
T
250 SEC. PULSE TEST
V
GS
J
V GS =7V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
10
50
C
= 10V
T J = +125 C
T J = +25 C
D
, CASE TEMPERATURE ( C)
[Cont.]
2
0
25
20
75
T J = +125 C
T J = +25 C
T J = -55 C
50
4
100
30
75
T J = -55 C
100 125 150
6
125
40
5.5V
4.5V
4V
6V
5V
150
50
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.15
1.10
1.05
1.00
0.95
0.90
200
160
120
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
50
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
T
, DRAIN CURRENT (AMPERES)
0.5
C
, CASE TEMPERATURE ( C)
V GS =10V
V GS =10 & 15V
0
0
100
DS
25
25
1.0
(ON) vs DRAIN CURRENT
D
[Cont.]
150
50
50
V GS =20V
1.5
75
75 100 125 150
200
100 125 150
2.0
250
5.5V
4.5V
4V
6V
5V
7V
300
2.5