APT40DS10HJ Microsemi Corporation, APT40DS10HJ Datasheet - Page 3
APT40DS10HJ
Manufacturer Part Number
APT40DS10HJ
Description
Isotop Schottky Diode Full Bridge Power Module
Manufacturer
Microsemi Corporation
Datasheet
1.APT40DS10HJ.pdf
(3 pages)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.2
0.8
0.6
0.4
0.2
80
60
40
20
0.00001
0
1
0
0.0
0.7
0.1
0.9
0.5
0.3
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
Forward Characteristic
0.4
0.0001
T
J
V
=125°C
F
0.6
(V)
0.8
T
J
=25°C
Rectangular Pulse Duration in Seconds
0.001
1.0
1.2
www.microsemi.com
Single Pulse
0.01
0.1
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