APT40GL120JU2 Microsemi Corporation, APT40GL120JU2 Datasheet
APT40GL120JU2
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APT40GL120JU2 Summary of contents
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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT40GL120JU2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • ...
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... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APT40GL120JU2 = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 35A T = 150°C ...
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... ISOTOP® registered trademark of ST Microelectronics NV Diode W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) Cathode Emitter Dimensions in Millimeters and (Inches) www.microsemi.com APT40GL120JU2 Min Typ Max Unit IGBT 0.68 °C/W 1.2 20 2500 V -55 175 °C 300 1.5 N.m 29 ...
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... Eon Eoff Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APT40GL120JU2 Output Characteristics T = 150° =19V GE V =15V (V) CE Energy losses vs Collector Current = 600V CE = 15V GE =12 Ω ...
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... U.S and Foreign patents pending. All Rights Reserved. Forward Characteristic of diode 80 V =600V CE 70 D=50% R =12 Ω =150° Tc=75° ZCS Diode Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APT40GL120JU2 T =125° =25°C J 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V ( ...