APTGF10X120P2G Microsemi Corporation, APTGF10X120P2G Datasheet - Page 2

• Manufacturer Part Number: APTGF10X120P2G
• Description: 3 Phase Bridge - Igbt 3 Phase Bridge Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
T
V
T
R
T
I
I
C
C
C
CE(on)
Q
Wt
GE(th)
V
T
CES
GES
T
d(off)
T
T
d(on)
t
ISOL
thJC
STG
oes
ies
res
rr
C
CES
rr
r
f
F
J
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
APT website – http://www.advancedpower.com
To Heatsink
Test Conditions
V
V
V
V
I
V
V
Test Conditions
V
V
f = 1MHz
Inductive Switching (125°C)
V
V
I
R
Test Conditions
I
V
I
V
di/dt =400A/µs
I
V
di/dt =400A/µs
F
F
F
C
C
G
GE
R
R
GE
GE
CE
GE
GE
GE
GE
CE
GE
Bus
= 10A
= 10A
= 10A
= 10A
= 10A
= 150Ω
= 600V
= 600V
= 1200V
= 25V
= 0V, I
= 0V
= 15V
= V
= 20V, V
= 0V
= 15V
= 0V
= 600V
CE
, I
C
= 500µA
C
CE
= 0.35 mA
= 0V
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
j
= 25°C
= 25°C
Diode
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
IGBT
M5
APTGF10X120E2
APTGF10X120P2
2500
Min
1200
Min
Min
Min
-40
-40
-40
4.5
2
Typ
Typ
Typ
200
800
Typ
600
380
2.9
2.6
0.5
0.4
1.2
2.7
3.3
5.5
60
38
55
50
80
Max
Max
1.55
Max
Max
150
125
125
185
400
120
3.5
110
100
570
120
3.4
3.2
3.9
6.5
2
Unit
°C/W
Unit
N.m
Unit
Unit
µA
µC
°C
nA
µs
pF
V
ns
V
V
V
V
g
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