APTGF100A120T3AG Microsemi Corporation, APTGF100A120T3AG Datasheet - Page 5

• Manufacturer Part Number: APTGF100A120T3AG
• Description: Phase Leg Npt Igbt Power Module Power Module
• Manufacturer: Microsemi Corporation

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
90
60
30
0
0
Operating Frequency vs Collector Current
20
switching
0.05
0.9
0.7
0.5
hard
0.1
0.3
ZCS
40
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
60
0.0001
I
C
(A)
80
100
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=5.6 Ω
=600V
120
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
140
Diode
0.01
APTGF100A120T3AG
125
100
75
50
25
0
0
0.1
Forward Characteristic of diode
0.5
1
T
J
1.5
=125°C
V
F
(V)
1
2
2.5
T
J
=25°C
3
10
3.5
5 – 5