APT10DC60HJ Microsemi Corporation, APT10DC60HJ Datasheet - Page 3

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APT10DC60HJ

Manufacturer Part Number
APT10DC60HJ
Description
Isotop Sic Diode Full Bridge Power Module
Manufacturer
Microsemi Corporation
Datasheet
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
2.5
1.5
0.5
400
350
300
250
200
150
100
0.00001
20
15
10
50
2
1
0
5
0
0
0
1
0.05
0.9
0.7
0.5
0.3
0.1
Capacitance vs.Reverse Voltage
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Forward Characteristics
T
J
V
=75°C
F
V
1
Forward Voltage (V)
R
10
Reverse Voltage
0.0001
T
J
1.5
=25°C
2
T
100
J
=125°C
2.5
T
J
=175°C
0.001
Rectangular Pulse Duration (Seconds)
3
1000
3.5
Single Pulse
www.microsemi.com
0.01
200
160
120
80
40
0
200
0.1
300
Reverse Characteristics
V
APT10DC60HJ
R
400
Reverse Voltage (V)
T
J
=125°C
T
J
=175°C
500
1
600
T
J
T
=25°C
J
700
=75°C
800
10
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