APT15GF120JCU2 Microsemi Corporation, APT15GF120JCU2 Datasheet

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APT15GF120JCU2

Manufacturer Part Number
APT15GF120JCU2
Description
Isotop Boost Chopper Npt Igbt Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
ISOTOP
I
CM
CES
C
GE
D
SiC chopper diode
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
NPT IGBT
ISOTOP
E
®
Boost chopper
Parameter
®
C
K
E
K
C
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 90°C
= 25°C
= 25°C
Application
Features
Benefits
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Non Punch Through (NPT) Fast IGBT
Chopper SiC Schottky Diode
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
-
-
-
-
-
-
-
-
-
30A@1150V
Max ratings
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Low leakage current
RBSOA and SCSOA rated
APT15GF120JCU2
1200
±20
156
30
15
60
®
Package (SOT-227)
V
I
C
CES
= 15A @ Tc = 90°C
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 6

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APT15GF120JCU2 Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT15GF120JCU2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APT15GF120JCU2 = 25°C unless otherwise specified j Test Conditions Min T = 25° 1200V T = 125° 25° ...

Page 3

... V , Collector to Emitter Voltage (V) CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APT15GF120JCU2 IGBT SiC chopper Diode 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) W=4.1 (.161) 7.8 (.307) W=4.3 (.169) 8.2 (.322) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 0.75 (.030) 4.2 (.165) 0.85 (.033) (2 places) 3.3 (.129) 1.95 (.077) 3 ...

Page 4

... 2 Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0. 100 T , Junction Temperature (°C) J APT15GF120JCU2 Output Characteristics (V 12 250µs Pulse Test < 0.5% Duty cycle 0 Collector to Emitter Voltage ( 15A 25°C ...

Page 5

... CE 3 Eon, 15A V = 15V 125°C J 2.5 2 Eoff, 15A 1 100 120 Gate Resistance (Ohms) www.microsemi.com APT15GF120JCU2 Turn-Off Delay Time vs Collector Current 400 V =15V =125°C 350 J 300 V =15V, GE 250 T =25° 600V 33Ω G 200 ...

Page 6

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT15GF120JCU2 Single Pulse 0.001 ...

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