APT30DC120HJ Microsemi Corporation, APT30DC120HJ Datasheet - Page 3

• Manufacturer Part Number: APT30DC120HJ
• Description: Isotop Sic Diode Full Bridge Power Module
• Manufacturer: Microsemi Corporation

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
2100
1800
1500
1200
0.00001
60
50
40
30
20
10
900
600
300
0
0
0
0
1
0.05
0.7
0.5
0.9
0.3
0.1
Capacitance vs.Reverse Voltage
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Forward Characteristics
V
T
F
1
V
J
Forward Voltage (V)
=75°C
R
10
0.0001
T
Reverse Voltage
J
=25°C
1.5
2
T
100
J
=175°C
2.5
T
0.001
Rectangular Pulse Duration (Seconds)
J
=125°C
3
1000
3.5
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Single Pulse
0.01
300
225
150
75
0
400
0.1
600
APT30DC120HJ
Reverse Characteristics
V
R
800
Reverse Voltage (V)
T
J
=175°C
T
J
=125°C
1000 1200 1400 1600
T
J
=75°C
1
T
J
=25°C
10
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