APT35DL120HJ Microsemi Corporation, APT35DL120HJ Datasheet - Page 3

no-image

APT35DL120HJ

Manufacturer Part Number
APT35DL120HJ
Description
Isotop Fast Diode Full Bridge Power Module
Manufacturer
Microsemi Corporation
Datasheet
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
70
60
50
40
30
20
10
0.8
0.6
0.4
0.2
0.00001
0
1
0
0
0.05
0.9
0.7
0.5
0.3
0.1
Forward Characteristic of diode
T
0.5
J
=125°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
1
V
F
(V)
T
1.5
J
=25°C
T
2
J
0.001
=125°C
rectangular Pulse Duration (Seconds)
2.5
www.microsemi.com
Single Pulse
0.01
5
4
3
2
1
0
0
V
V
T
J
CE
GE
Energy losses vs Collector Current
= 125°C
10
APT35DL120HJ
= 600V
= -15V
0.1
20
30
I
F
40
(A)
1
50
60
70
10
80
3 - 3

Related parts for APT35DL120HJ