APT20M120JCU3 Microsemi Corporation, APT20M120JCU3 Datasheet
APT20M120JCU3
Related parts for APT20M120JCU3
APT20M120JCU3 Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT20M120JCU3 V = 1200V DSS R = 560mΩ typ @ Tj = 25°C DSon I = 20A @ Tc = 25°C D Application • ...
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... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT20M120JCU3 = 25°C unless otherwise specified j Test Conditions T = 25°C V =1200V 125°C ...
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... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 0.0001 APT20M120JCU3 W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) Anode Source Dimensions in Millimeters and (Inches) Single P ulse 0.001 0.01 ...
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... =25° =600V =960V 120 160 200 240 280 320 Gate Charge (nC) www.microsemi.com APT20M120JCU3 Low Voltage Output Characteristics 30 T =125° = & Drain to Source Voltage (V) ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT20M120JCU3 Single Pulse 0.001 ...