APT50GF60JCU2 Microsemi Corporation, APT50GF60JCU2 Datasheet

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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT50GF60JCU2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • ...

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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APT50GF60JCU2 = 25°C unless otherwise specified j Test Conditions Min T = 25° 600V T = 125° 25° ...

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... V , Collector to Emitter Voltage (V) CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APT50GF60JCU2 IGBT SiC chopper Diode 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) W=4.1 (.161) 7.8 (.307) W=4.3 (.169) 8.2 (.322) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 0.75 (.030) 4.2 (.165) 0.85 (.033) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2 ...

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... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. 100 T , Junction Temperature (°C) J APT50GF60JCU2 Output Characteristics (V 100 250µs Pulse Test < 0.5% Duty cycle Collector to Emitter Voltage ( 50A 25° ...

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... 15V 1. 125°C Eoff, 50A J 1 0.75 0.5 0. Gate Resistance (Ohms) www.microsemi.com APT50GF60JCU2 Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...

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... Rectangular Pulse Duration (Seconds) 400 350 300 T =175°C 250 J 200 =125°C J 150 100 50 0 2.5 3 3.5 200 100 1000 www.microsemi.com APT50GF60JCU2 0 Reverse Characteristics T =175° =125° =75° =25°C J 300 400 500 600 700 800 V Reverse Voltage (V) ...