APT60DS20HJ Microsemi Corporation, APT60DS20HJ Datasheet

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APT60DS20HJ

Manufacturer Part Number
APT60DS20HJ
Description
Isotop Schottky Diode Full Bridge Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
V
I
I
F(AV)
V
FSM
RRM
Full Bridge Power Module
R
ISOTOP
~
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward
Current
Non-Repetitive Forward Surge Current
+
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
®
Schottky Diode
-
Parameter
~
Duty cycle = 50%
www.microsemi.com
Application
Features
Benefits
8.3ms
Switch mode power supplies rectifier
Induction heating
Welding equipment
Ultra fast recovery times
Soft recovery characteristics
High current
Very low stray inductance
High level of integration
ISOTOP
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
T
T
T
C
C
J
= 45°C
= 25°C
= 80°C
V
I
F
RRM
®
= 60A @ Tc = 80°C
Package (SOT-227)
APT60DS20HJ
= 200V
Max ratings
200
600
90
60
Unit
V
A
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APT60DS20HJ Summary of contents

Page 1

... Maximum Peak Repetitive Reverse Voltage RRM Maximum Average Forward I F(AV) Current I Non-Repetitive Forward Surge Current FSM These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT60DS20HJ V = 200V RRM I = 60A @ Tc = 80°C F Application • Switch mode power supplies rectifier • ...

Page 2

... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT60DS20HJ = 25°C unless otherwise specified j Test Conditions Min I = 60A 120A 60A T = 125° ...

Page 3

... RRM 35 T =125°C J 120 =133V 400 600 800 0 100 1000 www.microsemi.com APT60DS20HJ =125° =133V R 120 200 400 600 800 -di /dt (A/µs) F vs. Current Rate of Charge 120 200 ...

Page 4

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT60DS20HJ 11.8 (.463) 12.2 (.480) 8 ...

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