APTC60DDAM70CT1G Microsemi Corporation, APTC60DDAM70CT1G Datasheet

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APTC60DDAM70CT1G

Manufacturer Part Number
APTC60DDAM70CT1G
Description
Dual Boost Chopper Super Junction Mosfet Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
R
V
V
E
E
I
Super Junction MOSFET
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Dual boost chopper
SiC chopper diode
APT0502 on www.microsemi.com
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Pins 3/4 must be shorted together
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Parameter
www.microsemi.com
Application
Features
Benefits
APTC60DDAM70CT1G
V
R
I
T
T
T
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 39A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
SiC Schottky Diode
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
= 600V
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
= 70mΩ max @ Tj = 25°C
Symmetrical design
Max ratings
1800
600
160
±20
250
39
29
70
20
1
DSon
Unit
mJ
W
V
A
V
A
1 – 7

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APTC60DDAM70CT1G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60DDAM70CT1G V = 600V DSS R = 70mΩ max @ Tj = 25°C DSon I = 39A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APTC60DDAM70CT1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V GS ...

Page 3

... T = 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTC60DDAM70CT1G Characteristic CoolMOS SiC Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ...

Page 4

... V , Drain to Source Voltage ( (on) vs Drain Current DS 1.1 Normalized to V =10V @ 19.5A GS 1.05 1 0.95 0 Drain Current (A) D APTC60DDAM70CT1G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 140 V DS 120 250µs pulse test @ < 0.5 duty cycle 6.5V 100 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTC60DDAM70CT1G ON resistance vs Temperature 3.0 V =10V GS 2 39A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 100 limited by R ...

Page 6

... D=50 =5Ω =125°C J Hard 20 T =75°C switching Drain Current (A) D www.microsemi.com APTC60DDAM70CT1G Rise and Fall times vs Current 120 V =400V DS 100 R =5Ω =125° L=100µ Drain Current (A) ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60DDAM70CT1G Single Pulse 0.001 ...

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