APTGT300TL60G Microsemi Corporation, APTGT300TL60G Datasheet

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APTGT300TL60G

Manufacturer Part Number
APTGT300TL60G
Description
Three Level Inverter Trench Field Stop Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Q1 to Q4 Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
G1
E1
E2
G2
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Three level inverter
NEUTRAL
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR5
CR6
Power Module
VBUS
G1
E1
G2
E2
G3
E3
G4
E4
Parameter
Q1
Q2
Q3
Q4
0/VBUS
NEUTRAL
OUT
0/VBUS
VBUS
OUT
CR1
CR3
CR4
CR2
www.microsemi.com
G4
E4
E3
G3
T
T
T
T
T
C
C
C
C
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
600A @ 550V
Max ratings
Solar converter
Uninterruptible Power Supplies
Trench + Field Stop IGBT Technology
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
600
400
300
600
±20
935
V
I
-
-
-
-
-
-
-
-
-
C
APTGT300TL60G
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
= 300A @ Tc = 80°C
Symmetrical design
M5 power connectors
= 600V
Unit
W
V
A
V
1 - 7

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APTGT300TL60G Summary of contents

Page 1

... T = 80°C 300 25°C 600 C ± 25°C 935 150°C 600A @ 550V j www.microsemi.com APTGT300TL60G V = 600V CES I = 300A @ Tc = 80° Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...

Page 2

... T Turn-off Delay Time d(off) T Fall Time f E Turn on Energy on E Turn off Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGT300TL60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 300A T = 150°C ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTGT300TL60G Test Conditions Min 600 T = 25° =600V 150° 80°C I ...

Page 4

... SP6 Package outline See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com Typical performance curve APTGT300TL60G Operating Frequency vs Collector Current 80 V =300V CE D=50% R =2.2Ω 50° =85° Hard switching 100 200 300 ...

Page 5

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.3 0.06 0.04 0.1 Single Pulse 0.02 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT300TL60G Output Characteristics 500 V =19V T = 150° 400 V =13V GE 300 V =15V GE 200 V GE 100 0 0 0.5 1 1.5 2 2.5 V (V) ...

Page 6

... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 2 2.4 Energy losses vs Collector Current 300V = 300V 1.8 Ω = 200A 150°C = 150° 12.5 15 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT300TL60G 100 200 300 400 I ( ...

Page 7

... J 1 300V 300A 150° 12.5 15 Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT300TL60G Energy losses vs Collector Current V = 300V 2.2Ω 150°C J 100 200 300 400 500 I ( ...

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