APTGT20TL601G Microsemi Corporation, APTGT20TL601G Datasheet

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APTGT20TL601G

Manufacturer Part Number
APTGT20TL601G
Description
Three Level Inverter Trench Field Stop Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Q1 to Q4 Absolute maximum ratings
RBSOA
Symbol
All multiple inputs and outputs must be shorted together
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Three level inverter
See application note APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Power Module
5/6 ; 9/10
Parameter
www.microsemi.com
Application
Features
Benefits
T
T
T
T
T
C
C
C
C
J
Solar converter
Uninterruptible Power Supplies
Trench + Field Stop IGBT Technology
Very low stray inductance
High level of integration
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
APTGT20TL601G
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
-
-
-
-
-
-
-
C
CES
= 20A @ Tc = 80°C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
= 600V
40A @ 550V
Max ratings
600
±20
32
20
40
62
Unit
W
V
A
V
1 - 6

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APTGT20TL601G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT20TL601G V CES I C Application • Solar converter • Uninterruptible Power Supplies Features • ...

Page 2

... T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGT20TL601G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 20A T = 150°C ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTGT20TL601G Test Conditions Min 600 T = 25° =600V 150° 80°C I ...

Page 4

... SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical performance curve APTGT20TL601G Operating Frequency vs Collector Current 80 V =300V CE 60 D=50 2Ω 50° =85°C c Hard 20 switching ...

Page 5

... Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.8 2.4 0.9 2 0.7 1.6 0.5 1.2 0.3 0.8 0.1 0.4 Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT20TL601G Output Characteristics 40 V =19V T = 150° =15V 0.5 1 1.5 2 2.5 ...

Page 6

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT20TL601G =25° ...

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