APTGF90DA60CT1G Microsemi Corporation, APTGF90DA60CT1G Datasheet
APTGF90DA60CT1G
Related parts for APTGF90DA60CT1G
APTGF90DA60CT1G Summary of contents
Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF90DA60CT1G V I Application • and DC motor control • Switched Mode Power Supplies • ...
Page 2
... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APTGF90DA60CT1G = 25°C unless otherwise specified j Test Conditions Min 600V 25°C V =15V 100A T = 125° ...
Page 3
... K 25/85 25 ∆B ⎡ exp ⎢ B ⎢ ⎣ (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGF90DA60CT1G IGBT SiC chopper diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ...
Page 4
... Switching Energy Losses vs Gate Resistance 3.5 3 2.5 2 1 Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 APTGF90DA60CT1G Operating Frequency vs Collector Current 250 V =300V CE D=50% 200 R =2.2Ω 25° =75°C 150 ZCS C 100 ZVS hard switching ...
Page 5
... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90DA60CT1G Single Pulse 0.001 ...