APT58M50JU3 Microsemi Corporation, APT58M50JU3 Datasheet
APT58M50JU3
Related parts for APT58M50JU3
APT58M50JU3 Summary of contents
Page 1
... Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APT58M50JU3 DSon ® Package (SOT-227) Max ratings Unit 500 270 ± mΩ 543 ...
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... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT58M50JU3 = 25°C unless otherwise specified j Test Conditions T = 25° 500V 125°C ...
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... Anode Source Dimensions in Millimeters and (Inches) Single P ulse 0.001 0.01 0.1 www.microsemi.com APT58M50JU3 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) 0.85 (.033) 12.8 (.504) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal ...
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... =25° =250V =400V 120 180 240 300 Gate Charge (nC) www.microsemi.com APT58M50JU3 Low Voltage Output Characteristics 160 V =7,8 &10V 140 GS 120 100 Drain to Source Voltage (V) DS Transfert Characteristics 125 V > I (on)xR ...
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... 600 800 1000 1200 0 Max. Average Forward Current vs. Case Temp 100 1000 25 www.microsemi.com APT58M50JU3 1 10 Trr vs. Current Rate of Charge T =125° =400V 200 400 600 800 1000 1200 -di /dt (A/µ ...