MMBT6520 N/A, MMBT6520 Datasheet - Page 2

• Manufacturer Part Number: MMBT6520
• Description: Silicon NPN Transistor
• Manufacturer: N/A

ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(I
(I
(I
(I
(I
Collector–Emitter Saturation Voltage
(I
(I
(I
(I
Base – Emitter Saturation Voltage
(I
(I
(I
Base–Emitter On Voltage
(I
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V
Collector –Base Capacitance
(V
Emitter –Base Capacitance
(V
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
= –1.0 mAdc, V
= –10mAdc, V
= –30 mAdc, V
= –50 mAdc, V
= –100 mAdc, V
= –10mAdc, I
= –20 mAdc, I
= –30 mAdc, I
= –50 mAdc, I
= –10mAdc, I
= –20mAdc, I
= –30mAdc, I
= –100mAdc, V
= –0.5 V, f = 1.0 MHz)
= –20 V, I
= –20 V, f = 1.0 MHz)
C
= –10mA, f = 20 MHz)
B
B
B
B
Characteristic
B
B
B
CE
= –1.0mAdc)
= –1.0mAdc,)
= –2.0mAdc,)
= –3.0mAdc,)
CE
CE
= –2.0 mAdc)
= –3.0mAdc)
= –5.0 mAdc)
CE
CE
CE
= –10 Vdc)
= –10 Vdc)
= –10 Vdc)
= –10 Vdc)
= –10V )
= –10 Vdc)
(T
A
= 25°C unless otherwise noted) (Continued)
Symbol
V
V
V
C
C
h
CE(sat)
BE(sat)
BE(on)
f
FE
T
cb
eb
LESHAN RADIO COMPANY, LTD.
Min
20
30
30
20
15
40
—
—
—
—
—
—
—
—
—
—
–0.30
–0.35
–0.50
–0.75
–0.85
–0.90
Max
–1.0
–2.0
200
200
200
100
6.0
—
—
—
MMBT6520LT1
MHz
Unit
Vdc
Vdc
Vdc
pF
pF
—
M24–2/5