DSS9110Y Diodes Incorporated, DSS9110Y Datasheet - Page 3

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DSS9110Y

Manufacturer Part Number
DSS9110Y
Description
PNP SURFACE MOUNT TRANSISTOR
Manufacturer
Diodes Incorporated
Datasheet
www.DataSheet4U.net
Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DSS9110Y
Document number: DS31678 Rev. 2 - 2
2.4
2.0
1.6
1.2
0.8
0.4
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
0
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
I = 31.5mA
V , COLLECTOR-EMITTER VOLTAGE (V)
B
CE
I = 13.5mA
B
Characteristic
1
I = 36mA
B
I = 18mA
B
I = 40.5mA
I = 22.5mA
2
B
B
I = 27mA
B
I = 45mA
B
@T
3
A
= 25°C unless otherwise specified
4
I = 4.5mA
B
I = 9mA
B
Symbol
V
R
V
BV
BV
BV
V
C
I
I
I
CE(sat)
CE(sat)
BE(sat)
BE(on)
h
CBO
CES
EBO
5
f
t
t
FE
obo
t
t
CBO
CEO
EBO
T
d
s
r
f
www.diodes.com
3 of 6
-120
-100
Min
150
150
150
125
100
-5
Typ
1,000
230
165
160
16
27
900
800
700
600
500
400
300
200
100
0
1
Fig. 5 Typical DC Current Gain vs. Collector Current
T = 125°C
T = 85°C
T = 25°C
T = -55°C
-100
-100
-100
-120
-180
-320
Max
-1.1
450
320
-50
A
A
A
A
-1
I , COLLECTOR CURRENT (mA)
C
T = 150°C
10
MHz
Unit
mΩ
mV
A
nA
μA
nA
nA
pF
ns
ns
ns
ns
V
V
V
V
V
V
I
I
I
V
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
B1
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
CE
CC
= -100μA, I
= -1A, I
= -1A, I
= -1A, I
= -100μA, I
= -10mA, I
= -250mA, I
= -500mA, I
= -I
= -4V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
100
= -80V, I
= -80V, I
= -80V, V
= -10V, f = 1.0MHz
= -10V, I
= -10V, I
B2
B
B
B
= -50mA
= -100mA
= -100mA
= -100mA
C
C
C
C
C
C
Test Condition
B
E
E
C
= 0
E
C
= -1mA
= -250mA
= -500mA
= -1A
= -1A
BE
B
B
C
= 0
= 0
= 0, T
= -50mA, f = 100MHz
1,000
= 0
= 0
= -25mA
= -50mA
= -1A,
= 0
V
CE
DSS9110Y
A
= -10V
= 150°C
© Diodes Incorporated
October 2010
10,000

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