MSC23132DL OKI electronic componets, MSC23132DL Datasheet

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MSC23132DL

Manufacturer Part Number
MSC23132DL
Description
32-bit DYNAMIC RAM MODULE
Manufacturer
OKI electronic componets
Datasheet
1.MSC23132DL.pdf (9 pages)
www.DataSheet.co.kr
MSC23132D/DL-xxBS8/DS8
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The MSC23132D/DL-xxBS8/DS8 is a fully decoded, 1,048,576-word x 32-bit CMOS dynamic random access
memory module composed of eight 4Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a
72-pin glass epoxy single-inline package. This module supports any application where high density and large
capacity of storage memory are required. The MSC23132DL (the low-power version) is specially designed for
lower-power applications.
FEATURES
· 1,048,576-word x 32-bit organization
· 72-pin socket insertable module
· Single +5V supply ± 10% tolerance
· Input
· Output
· Refresh : 1024cycles/16ms (1024cycles/128ms: L-version)
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability
· Multi-bit test mode capability
PRODUCT FAMILY
MSC23132D/DL-60BS8/DS8
MSC23132D/DL-70BS8/DS8
MSC23132D/DL-xxBS8 : Gold tab
MSC23132D/DL-xxDS8 : Solder tab
: TTL compatible
: TTL compatible, 3-state
Semiconductor
Family
60ns
70ns
t
Access Time (Max.)
RAC
30ns
35ns
t
AA
15ns
20ns
t
CAC
110ns
130ns
Cycle
(Min.)
Time
Operating(Max.)
3960mW
3520mW
Power Dissipation
This version: Feb. 23. 1999
44mW/
8.8mW(L-version)
Standby(Max.)
Datasheet pdf - http://www.DataSheet4U.net/

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MSC23132DL Summary of contents

Page 1

... DRAMs in SOJ packages mounted with eight decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required. The MSC23132DL (the low-power version) is specially designed for lower-power applications. ...

Page 2

Semiconductor MODULE OUTLINE MSC23132D/DL-xxBS8/DS8 3.38Typ.  3.18 25.4±0.2 Typ. Typ. 1 10.16 6.35 2.03Typ. 6.35Typ. *1 The common size difference of the board width 12.5mm of its height is specified as ±0.2. The value above 12.5mm is specified as ...

Page 3

Semiconductor PIN CONFIGURATION Pin No. Pin Name DQ0 3 DQ16 4 DQ1 5 DQ17 6 DQ2 7 DQ18 8 DQ3 9 DQ19 ...

Page 4

Semiconductor BLOCK DIAGRAM A0-A9 /RAS0 /CAS0 /WE /CAS1 /RAS2 /CAS2 A0-A9 DQ DQ0 /RAS DQ DQ1 /CAS DQ DQ2 /WE DQ DQ3 / A0-A9 DQ DQ4 /RAS DQ DQ5 /CAS DQ ...

Page 5

Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to V Voltage on V Supply Relative Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Recommended Operating Conditions Parameter Power Supply Voltage ...

Page 6

Semiconductor DC Characteristics Parameter Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Average Power Supply Current (Operating) Power supply current (Standby) Average Power Supply Current (/RAS only refresh) Average Power Supply Current (/CAS before /RAS ...

Page 7

Semiconductor AC Characteristics (1/2) Parameter Random Read or Write Cycle Time Fast Page Mode Cycle Time Access Time from /RAS Access ...

Page 8

Semiconductor AC Characteristics (2/2) Parameter Write Command Set-up Time Write Command Hold Time Write Command Hold Time from /RAS Write Command Pulse Width Write Command to /RAS Lead Time Write Command to /CAS Lead Time Data-in Set-up Time Data-in ...

Page 9

Semiconductor Notes start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization cycles (/RAS only refresh or /CAS before /RAS refresh) before proper device operation is achieved. 2. The AC characteristics assumes ...

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