SPB80N03S2-03SMD Infineon Technologies Corporation, SPB80N03S2-03SMD Datasheet - Page 7

• Manufacturer Part Number: SPB80N03S2-03SMD
• Manufacturer: Infineon Technologies Corporation

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
parameter: I
AS
(BR)DSS
mJ
850
700
600
500
400
300
200
100
= f (T
V
36
34
33
32
31
30
29
28
27
D
0
-60
25
SPP80N03S2-03
= 80 A , V
j
= f (T
)
45
-20
D
=10 mA
65
j
)
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
Preliminary data
j
j


185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N03S2-03
20
Gate
D
= 80 A pulsed
40
)
60
0,2
V
80
DS max
SPB80N03S2-03
SPP80N03S2-03
100 120
0,8 V
2001-04-05
DS max
140
Q
nC
Gate
170