CM1293A ON Semiconductor, CM1293A Datasheet - Page 4

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CM1293A

Manufacturer Part Number
CM1293A
Description
2-and 4-Channel Low Capacitance ESD Protection Arrays
Manufacturer
ON Semiconductor
Datasheet

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Specifications (cont’d)
SYMBOL PARAMETER
R
V
I
C
V
V
V
LEAK
I
C
ESD
DYN
P
CL
IN
P
F
IO
Note 1: All parameters specified at T
Note 2: Human Body Model per MIL-STD-883, Method 3015, C
Note 3: Standard IEC 61000-4-2 with C
Note 4: These measurements performed with no external capacitor on V
Operating Supply Voltage (V
Operating Supply Current
Diode Forward Voltage
Channel Leakage Current
Channel Input Capacitance
Channel I/O to I/O capacitance
ESD Protection
Channel Clamp Voltage
Dynamic Resistance
Top Diode
Bottom Diode
Peak Discharge Voltage at any
channel input, in system
Positive Transients
Negative Transients
Positive Transients
Negative Transients
Contact discharge per
IEC 61000-4-2 standard
ELECTRICAL OPERATING CHARACTERISTICS
P
A
-V
= –40°C to +85°C unless otherwise noted.
Rev. 4 | Page 4 of 16 | www.onsemi.com
Discharge
N
)
CONDITIONS
(V
I
T
At 1 MHz, V
Notes 3 and 4; T
I
I
= 150pF, R
F
PP
PP
A
= 8mA; T
P
=25° C; V
=1A, t
=1A, t
-V
N
)=3.3V
p
p
=8/20µs; T
=8/20µs; T
Discharge
A
P
=25° C
=5V, V
P
=3.3V, V
= 330 Ω , V
Discharge
A
=25° C
N
A
A
=0V
=25° C; Notes 4
=25° C; Notes 4
= 100pF, R
N
=0V, V
P
P
.
= 3.3V, V
IN
=1.65V
Discharge
N
grounded.
= 1.5K Ω, V
0.60
0.60
MIN
±8
P
1
= 3.3V, V
TYP
0.80
0.80
+9.9
–1.6
0.96
±0.1
3.3
1.5
0.5
N
www.DataSheet4U.com
grounded.
CM1293A
MAX
0.95
0.95
±1.0
5.5
8.0
2.0
UNITS
µA
µA
pF
pF
kV
V
V
V
V
V

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