DFB7N60 DnI, DFB7N60 Datasheet
DFB7N60
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DFB7N60 Summary of contents
Page 1
... FEB, 2005. Rev. 0. =10V GS ◀ ◀ 1. Gate Parameter ° °C) = 100 °C) C Parameter Min Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved. DFB7N60 N-Channel MOSFET 2. Drain BV = 600V DSS ● ● 1.0 ohm ▲ ▲ DS(ON) ● ● ● ● 7. Source ...
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... DFB7N60 Electrical Characteristics Symbol Off Characteristics BV Drain-Source Breakdown Voltage DSS Δ Breakdown Voltage Temperature DSS coefficient Δ Drain-Source Leakage Current DSS Gate-Source Leakage, Forward I GSS Gate-source Leakage, Reverse On Characteristics V Gate Threshold Voltage GS(th) Static Drain-Source On-state Resis- R DS(ON) tance Dynamic Characteristics ...
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... oss rss gd 10 ※ Notes : f=1MHz Drain-Source Voltage [V] DFB7N60 Fig 2. Transfer Characteristics 1 o 150 -55 C ※ Notes : 50V DS 2. 250µ s Pulse Test Gate-Source Voltage [V] GS Fig 4 ...
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... DFB7N60 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by R DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] ...
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... R G 10V 5 Same Type as DUT 300nF DUT (0.5 rated DUT DSS DUT DFB7N60 Charge DS 90% 10 d(on) r d(off off BV 1 DSS ...
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... DFB7N60 Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) 6/7 DUT + Driver R G Same Type as DUT V GS • dv/dt controlled by R • I controlled by pulse period S Gate Pulse Width ...
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... DFB7N60 1.Gate 2. Drain 3 ...