KBP210-G Comchip Technology, KBP210-G Datasheet

KBP210-G

Manufacturer Part Number

KBP210-G

Description

(KBP200-G - KBP210-G) Silicon Bridge Rectifiers

Manufacturer

Comchip Technology

Datasheet

1.KBP210-G.pdf (3 pages)

Current page: 1 of 3
Download datasheet (85Kb)

www.DataSheet4U.com

Note:

Characteristics

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current (Note1) @ T

Non-Repetitive Peak Forward Surge Current 8.3ms Single

half-sine-wave superimposed on rated load (JEDEC

Method)

Forward Voltage (per element) @ I

Peak Reverse Current @ T

At Rated DC Blocking Voltage @ T

Rating for Fusing (t<8.3ms)

Typical Thermal Resistance (Note3)

Operating and Storage Temperature Range

Typical Junction Capacitance per element (Note2)

Silicon Bridge Rectifiers

“-G” suffix designated RoHS compliant version

KBP200-G thru 2010-G (RoHS Device)

Features:

Reverse Voltage: 50 ~ 1000 Volts

Forward Current: 2.0 Amp

Mechanical Data:

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate currently by 20%.

Diffused Junction

Low Forward Voltage Drop

High Reliability

High Current Capability

High Surge Current Capability

Ideal for Printed Circuit Boards

Case: Molded Plastic

Terminals: Plated Leads Solderable Per MIL

STD-202, Method 208

Weight: 1.7 grams (approx.)

Mounting position: Any

1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance junction to ambient mounted on PC board with 12mm

Comhip Technology Corporation

=25ºC

=2.0A

=100ºC

Tel:510-657-8671

= 50ºC

Symbol

RWM

FSM

, T

RRM

θJA

(RMS)

STG

Fax: 510-657-8921

200-G

KBP

copper pad.

+ ~ ~ -

201-G

KBP

100

202-G

KBP

200

140

www.comchiptech.com

-55 to +160

KBP

204-G

KBP

400

280

500

2.0

1.1

Dim

All Dimension in mm

206-G

KBP

600

420

14.22

10.67

11.68

12.70

4.57

3.60

2.16

0.76

1.52

KBP

Min.

208-G

KBP

800

560

15.24

11.68

12.70

Max

5.08

4.10

2.67

0.88

2010-G

1000

KBP

700

Page1

UNIT

A 2 S

K/W

ºC

Related parts for KBP210-G

KBP210-G Summary of contents

Page 1

... Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Reverse Voltage 1000 Volts Forward Current: 2.0 Amp Features: Diffused Junction Low Forward Voltage Drop High Reliability High Current Capability High Surge Current Capability Ideal for Printed Circuit Boards Mechanical Data: Case: Molded Plastic ...

Page 2

... Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) 2.0 1.5 1.0 0 Temperature (ºC) Flg1. Forward Current Derating Curve 100 Number of Cycles At 60Hz Flg3. Max Non-Repetitive Peak Fwd Surge Current “-G” suffix designated RoHS compliant version ...

Page 3

... Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) 10,000 1000 T = 150ºC J 100 T = 125º 100º 1 25ºC J 0.1 0. Percent of Rated Peak Reverse Voltage (%) Flg5. Typical Reverse Characteristics “-G” suffix designated RoHS compliant version ...

Related keywords

KBP210-G datasheet
KBP210-G data sheet
KBP210-G pdf datasheet
KBP210-G component
KBP210-G part
KBP210-G distributor
KBP210-G RoHS
KBP210-G datasheet download