US1 Philips Semiconductors, US1 Datasheet - Page 3

• Manufacturer Part Number: US1
• Description: SMA ultra fast low-loss controlled avalanche rectifiers
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m. For more
2000 Feb 14
I
T
T
V
I
t
C
R
R
SYMBOL
SYMBOL
SYMBOL
FSM
j
R
rr
stg
j
F
= 25 C unless otherwise specified.
d
th j-tp
th j-a
SMA ultra fast low-loss
controlled avalanche rectifiers
information please refer to the ‘General Part of associated Handbook’ .
non-repetitive peak forward current
storage temperature
junction temperature
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to tie-point; see Fig.10
thermal resistance from junction to ambient
US1A to US1G
US1J
US1A to US1G
US1J
PARAMETER
PARAMETER
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper 35 m.
PARAMETER
I
see Fig.4
see Fig.5
V
V
when switched from I
measured at I
V
see Fig.8
see Fig.9
F
R
R
R
= 1 A;
= V
= V
= 4 V; f = 1 MHz;
RRMmax
RRMmax
t = 8.3 ms half sine wave;
T
V
See Fig.3
j
R
= 25 C prior to surge;
R
; see Figs 6 and 7
; T
= V
= 0.25 A; see Fig.12
CONDITIONS
j
= 165 C; see Figs 6 and 7
RRMmax
3
F
CONDITIONS
= 0.5 A to I
R
= 1 A;
note 1
note 2
CONDITIONS
14
10
65
65
MIN.
TYP.
Product specification
25
+175
+175
1.1
1.4
10
50
50
US1 series
VALUE
MAX.
MAX.
100
150
27
A
V
V
ns
pF
pF
C
C
A
A
UNIT
UNIT
UNIT
K/W
K/W
K/W