MMBZ5235BW Pan Jit International Inc., MMBZ5235BW Datasheet - Page 2

• Manufacturer Part Number: MMBZ5235BW
• Description: SURFACE MOUNT SILICON ZENER DIODES
• Manufacturer: Pan Jit International Inc.

NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
3.Zener Voltage (V
4. Zener Impedance (Z
5. Surge Current (I
Part Number: MMBZ5221BW thru MMBZ5259BW
ELECTRICAL CHARACTERISTICS (T
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
2
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
current (I
wave pulse of 1/120 second duration superimposed on the test current, I
0
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
M
P
0
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
a
t r
m
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
W
N
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
ZT
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
u
t a
or I
1
2
3
5
6
7
8
9
0
1
2
4
5
6
7
9
0
1
2
3
5
6
8
0
1
2
4
5
6
7
8
9
m
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
s t
ZK
b
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
R
r e
) is superimposed on I
Z
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
Z
Z
e
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
n
r e
N
o
D
4
4
2
2
2
3
3
3
5
5
6
6
7
8
9
2
2
2
2
2
3
3
3
3
1
1
1
1
1
1
m
1 1
3
4 .
5 .
7 .
3 .
6 .
9 .
3 .
7 .
6 .
2 .
8 .
5 .
2 .
1 .
1 .
0
2
3
5
6
8
0
2
4
7
8
0
3
6
9
o i
o N
.
V
d
i m
e
A
a n
s
=25
V
ZT
Z l
M
Z
1
1
1
2
3
3
2
2
2
2
3
3
4
4
4
5
5
6
7
7
8
2
2
2
2
3
3
1 1
1
O
1
or I
9
5
1
7
i
0
2
4
@ I
1
C unless otherwise noted) V
n e
0 .
4 .
8 .
2 .
3 .
5 .
8 .
1 .
4 .
3 .
8 .
4 .
1 .
7 .
6 .
5
0
2
6
8
4
. n
7 .
7
5 .
4 .
3 .
2 .
6 .
3 .
0 .
9
4 .
9 .
8 .
6 .
5 .
2 .
2 .
1 .
ZK
9
7
5
r e
8
8
7
5
4
2
1
2
9
6
3
9
5
5
5
5
5
5
5
V
.
ZT
o V
a t l
M
e g
4
1 1
1
1
2
3
2
2
2
3
3
3
4
4
5
5
7
7
9
2
2
3
3
6
8
1
1
1
1
2
a
4
3
5
8
4
0
5 .
9 .
2
5 .
6 .
8 .
1 .
4 .
7 .
3 .
8 .
1 .
8 .
5 .
0
2
6
8
5
9
1
7
5 .
6 .
3
. x
5 .
3 .
6 .
9 .
1 .
6 .
7 .
1
2 .
4 .
5 .
8 .
5 .
6 .
8 .
9 .
1 .
2
3
4
5
7
8
2
4
6
8
4
8
6
1
1
5
5
5
5
5
5
V
3
3
3
3
2
2
2
2
1
1
1
1
2
3
1
1
1
2
2
3
4
4
4
5
7
8
2
1 1
F
7
5
6
8
0
0
0
0
8
4
3
2
2
0
5
9
3
4
9
8
0
0
9
7
0
7
3
6
7
1
1
=1.2V max, I
ZT
Z
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.
@ I
M
ZT
x a
m
4
4
9
8
7
6
5
5
3
3
3
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
F
Z .
7
5
=100mA for all types.
5 .
5 .
8 .
2 .
6 .
2 .
5 .
2 .
8 .
4 .
2 .
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A
n e
r e
m I
p
1
1
1
1
1
1
1
2
1
1
1
1
7
5
5
6
6
6
6
6
6
6
6
6
6
6
6
6
6
7
7
8
d e
0
2
2
3
6
6
7
9
9
6
6
0
5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
5
0
0
0
0
0
0
0
0
0
0
n a
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Z
0
0
0
0
0
0
0
0
0
0
0
0
e c
ZK
@ I
ZK
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
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0
0
0
0
0
m
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
2 .
A
5
5
5
5
5
5
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5
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5
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5
1
1
0
7
5
2
0
0
0
0
0
0
0
0
0
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0
1
1
L
0
0
5
5
5
5
5
3
3
3
3
3
3
2
1
5 .
A
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
5
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I
a k
x a
R
e g
@ V
R
L
v e
) at 30
u C
r e
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R
e s
t n
6
8
9
9
O
1
1
1
1
1
2
2
2
3
2
2
1 1
V
4
C, from the diode body.
2
2
3
5
6
6
8
1
1
1
1
1
1
1
1
5 .
4 .
1 .
9 .
3
5
7
0
2
4
5
7
8
1
1
P
S
S
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S
S
S
S
S
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S
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a
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c
T
T
T
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T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
k
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PAGE 2
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