SDB0900E70 Suntac Electronic, SDB0900E70 Datasheet - Page 2

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SDB0900E70

Manufacturer Part Number
SDB0900E70
Description
Silicon Bilateral Voltage Triggered Switch
Manufacturer
Suntac Electronic
Datasheet
Sidac
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated V
I
I
I
I
I
R
V
V
V
General Notes
BO
DRM
H
T(RMS)
TSM
BO
DRM
TM
S
Type
— Dynamic holding current 50/60 Hz sine wave; R = 100
— Switching resistance
— Breakover current 50/60 Hz sine wave
T
repetitive)
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Storage temperature range (T
The case (T
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (T
Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; 1/16" (1.59 mm) from case.
— Breakover voltage 50/60 Hz sine wave
— Peak on-state voltage; I
— Peak one-cycle surge current 50/60 Hz sine wave (non-
— Repetitive peak off-state current 50/60 Hz sine wave; V = V
J
— Repetitive peak off-state voltage
— On-state RMS current T
100 °C
SDB0900E70
SDB1050E70
SDB1100E70
SDB1200E70
SDB1300E70
SDB1400E70
SDB2000E70
SDB2200E70
SDB1500E70
SDB2400E70
SDB2500E70
TO-92
C
See “Package Dimensions” section for variations. (9)
) or lead (T
SDB1400G
SDB1500G
SDB2200G
SDB0900G
SDB1050G
SDB1100G
SDB1200G
SDB1300G
SDB2000G
SDB2400G
SDB2500G
R
L
) temperature is measured as shown on
DO-15X
S
T
= 1 A
=
J
S
J
) is -65 °C to +150 °C.
) is -40 °C to +125 °C.
------------------------------- -
Part No.
V
125 °C 50/60 Hz sine wave
I
BO
S
I
SDB2000F1
SDB2200F1
SDB2400F1
SDB2500F1
SDB3000F1
BO
Pin 1
V
TO-202
Do not use
S
(10)
Pin 2
50/60 Hz sine wave
Pin 3
Do
not
use
tab
DRM
SDB2400S
SDB2500S
SDB0900S
SDB1050S
SDB1100S
SDB1200S
SDB1300S
SDB1400S
SDB1500S
SDB2000S
SDB2200S
DO-214
;
DRM
(6) (7) (8)
I
T(RMS)
Amps
MAX
1
1
1
1
1
1
1
1
1
1
1
1
Electrical Specification Notes
(1) See 4 for V
(2) See 4 for I
(3) See 3 for I
(4) See 5 for test circuit.
(5) See 3 for more than one full cycle rating.
(6) T
(7) See 5 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
(9) See package outlines for lead form configurations. When ordering
(10) Do not use electrically connected mounting tab or center lead.
V-I Characteristics
T
T
T
less than switching resistance.
special lead forming, add type number as suffix to part number.
C
C
L
L
V
±180
±180
±190
±200
±200
Volts
MIN
±70
±90
±90
±90
±90
±90
±90
DRM
100 °C for DO-15X
90 °C for DO-214
90 °C for TO-92 Sidac
105 °C for TO-202 Sidacs
-V
R
S =
BO
H
BO
versus case temperature.
(V
MIN
(I
104
120
130
140
190
205
220
240
270
110
versus junction temperature.
79
95
change versus junction temperature.
BO
S
I
DRM
- I
- V
BO
Volts
V
(1)
S
)
I
BO
)
BO
I
I
I
S
T
H
MAX
113
118
125
138
146
170
215
230
250
280
330
97
+I
-I
V
T
µAmps
I
MAX
DRM
V
5
5
5
5
5
5
5
5
5
5
5
5
DRM
V
S
V
BO
µAmps
R
MAX
S
I
(2)
10
10
10
10
10
10
10
10
10
10
10
10
BO
+V
TYP
Data Sheets
60
60
60
60
60
60
60
60
60
60
60
60
mAmps
(3) (4)
I
H
MAX
150
150
150
150
150
150
150
150
150
150
150
150
2

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