SDB10S30SMD Infineon Technologies Corporation, SDB10S30SMD Datasheet
SDB10S30SMD
Related parts for SDB10S30SMD
SDB10S30SMD Summary of contents
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Silicon Carbide Schottky Diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Type Package SDP10S30 P-TO220-3-1. SDB10S30 P-TO220-3.SMD Q67040-S4373 SDT10S30 P-TO220-2-2. ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: P-TO263-3-2: @ min. footprint 2 P-TO263-3- cooling area Electrical Characteristics Parameter Static Characteristics Diode forward voltage =10A, T =25° ...
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Electrical Characteristics,at T Parameter AC Characteristics 1) Total capacitive charge =200V, I =10A /dt=-200A/µ Switching time =200V, I =10A /dt=-200A/µ Total capacitance =0V, T =25°C, f=1MHz V ...
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Power dissipation tot 100 120 140 3 Typ. forward characteristic = f (V ...
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Typ. reverse current vs. reverse voltage =f µ 100 150 7 Typ. capacitance vs. reverse voltage C= f ...
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Typ. capacitive charge vs. current slope Q =f(di /dt parameter 150 ° *0 100 200 300 400 ...
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Preliminary data P-TO220-3-1 P-TO220-3-1 symbol min A 9.70 B 14.88 C 0.65 D 3.55 E 2.60 F 6.00 G 13.00 H 4.35 K 0. 4.30 P 1.17 T 2.30 TO-220-3-45 (P-TO220SMD) symbol min A 9.80 B ...
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Preliminary data MAX/MIN-dimensions are given in inches[mm] Page 8 SDP10S30, SDB10S30 SDT10S30 2001-12-04 ...
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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...