1SS413 Semtech Corporation, 1SS413 Datasheet
1SS413
Manufacturer Part Number
1SS413
Description
Silicon Epitaxial Schottky Barrier Diode
Manufacturer
Semtech Corporation
Datasheet
1.1SS413.pdf
(2 pages)
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1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
Absolute Maximum Ratings (T
Characteristics at T
Forward Voltage
Reverse Current
Total Capacitance
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature
at I
at V
at V
F
R
R
= 50 mA
= 20 V
= 0 V, f = 1 MHz
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
a
listed on the Hong Kong Stock Exchange, Stock Code:
= 25
Parameter
Parameter
O
C
a
= 25
O
C)
724)
Symbol
Symbol
C
V
I
R
V
I
F
P
T
V
I
FSM
T
T
I
FM
RM
O
tot
R
J
s
PINNING
1
Marking Code: "Q"
Simplified outline SOD-523 and symbol
Top View
PIN
Typ.
1
2
3.9
- 55 to + 125
-
-
Value
100
100
125
25
20
50
1
Q
Dated : 23/11/2006
DESCRIPTION
Cathode
Anode
Max.
0.55
0.5
-
2
mW
Unit
mA
mA
O
O
V
V
A
C
C
Unit
µA
pF
V
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1SS413 Summary of contents
Page 1
... SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application Absolute Maximum Ratings (T Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Characteristics Parameter Forward Voltage ...
Page 2
... PACKAGE OUTLINE Plastic surface mounted package; 2 leads UNIT A 0.70 mm 0.60 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: ® ∠ ALL ROUND 0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75 724) SOD-523 V ∠ 1.7 O ...