BAS40-04-HT3 Vishay Intertechnology, BAS40-04-HT3 Datasheet - Page 2

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BAS40-04-HT3

Manufacturer Part Number
BAS40-04-HT3
Description
Schottky Diodes
Manufacturer
Vishay Intertechnology
Datasheet
BAS40-HT3 to BAS40-06-HT3
Vishay Semiconductors
Electrical Characteristics
T
Package Dimensions in mm
www.vishay.com
2
Reverse breakdown voltage
Leakage current
Forward voltage
Capacitance
Reverse recovery time
amb
= 25 °C, unless otherwise specified
Parameter
18057
I
Pulse test V
Pulse test t
I
Pulse test t
I
V
I
I
R
F
F
F
rr
R
= 1.0 mA
= 40 mA,
= 10 mA, I
= 1 mA, R
= 10 µA (pulsed)
= 0 V, f = 1 MHz
Test condition
p
p
R
L
< 300 µs,
< 300 µs,
R
= 30 V, t
= 100 Ω
= 10 mA,
p
< 300 µs
Symbol
V
C
V
V
(BR)
I
t
R
tot
rr
F
F
ISO Method E
Min
40
Typ.
4.0
20
Document Number 85688
1000
Max
100
380
5
5
Rev. 5, 11-Sep-03
VISHAY
Unit
mV
mV
nA
pF
ns
V

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