GP1200ESM33 Dynex Semiconductor, GP1200ESM33 Datasheet - Page 6

• Manufacturer Part Number: GP1200ESM33
• Description: High Reliability Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1200ESM33
10000
1000
6/9
2400
2200
2000
1800
1600
1400
1200
1000
100
800
600
400
200
10
1
0
1
0
Conditions:
T
Fig.9 DC current rating vs case temperature
I
vj
C
= 125˚C, T
Fig.7 Forward bias safe operating area
max. (single pulse)
20
Collector-emitter voltage, V
10
40
case
Case temperature, T
= 80˚C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
60
100
80
100
case
ce
- (˚C)
1000
- (V)
120
t
p
= 100 s
140
10000
160
100
400
380
360
340
320
300
280
260
240
220
200
0.1
10
0.001
1
0
Fig.8 Transient thermal impedance
10
Fig.10 Typical input capacitance
0.01
Collector-emitter voltage, V
Pulse width, t
20
0.1
30
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p
- (ms)
T
V
vj
GE
40
= 25˚C, V
CE
= 0V, f = 1MHz
- (V)
1
Transistor
50
CE
Diode
= 25V
10
60