GP1200FSS18 Dynex Semiconductor, GP1200FSS18 Datasheet - Page 5

• Manufacturer Part Number: GP1200FSS18
• Description: Single Switch Igbt Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1800
1600
1000
2400
2200
2000
1400
1200
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
800
Fig. 5 Typical switching energy vs collector current
600
400
200
0
0
0
0
T
V
V
R
L = 50nH
Common emitter
T
case
GE
CE
G
case
= 2.2Ω
Fig. 3 Typical output characteristics
= 900V
= 15V
= 125˚C
= 25˚C
1.0
200
Collector-emitter voltage, V
2.0
Collector current, I
400
3.0
600
4.0
C
E
- (A)
800
OFF
ce
V
5.0
ge
- (V)
= 20/15/12V
1000
E
ON
V
6.0
ge
E
= 10V
REC
1200
7.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
1800
1000
2400
2200
2000
1600
1400
1200
800
600
200
400
Fig. 6 Typicalswitching energy vs gate resistance
0
0
0
0
T
V
V
I
L = 50nH
C
Common emitter
T
case
GE
CE
case
= 1200A
1
1.0
Fig. 4 Typical output characteristics
= 900V
= 15V
= 125˚C
= 125˚C
2
2.0
Collector-emitter voltage, V
Gate resistance, R
E
3.0
3
OFF
4
4.0
5
5.0
G
V
6.0
6
- (Ohms)
ge
GP1200FSS18
= 20/15/12V
ce
7.0
7
- (V)
8.0
8
V
E
ge
ON
E
9.0 10.0
9
= 10V
REC
5/10
10