SF100CB100 SanRex Corporation, SF100CB100 Datasheet
SF100CB100
Manufacturer Part Number
SF100CB100
Description
Manufacturer
SanRex Corporation
Datasheet
1.SF100CB100.pdf
(3 pages)
Available stocks
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Quantity
Price
Company:
Part Number:
SF100CB100
Manufacturer:
SANREX
Quantity:
80
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Part Number:
SF100CB100
Manufacturer:
TOSHIBAHIBA
Quantity:
8 600
Part Number:
SF100CB100
Manufacturer:
MOSFET
Quantity:
20 000
Part Number:
SF100CB100
Quantity:
60
SF100CB100 is a isolated power MOSFET module designed for fast swiching applications
of high voltage and current with a fast recovery diode（trr ≦300ns ）reverse connected.
The mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
■Maximum Ratings
■Electrical Characteristics
●
●
●
●
●
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Rth （ j-c） Thermal Resistance
（Applications）
Symbol
Symbol
V
（BR） DSS
R
td （ off）
V
td （ on）
V
I
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
t
Coss
D
rr
V
Crss
V
Tstg
Ciss
V
V
DS （on）
I
I
GS （th）
DS （on）
gfs
＝100A, V
I
-I
GSS
DSS
≦300ns fast recovery diode for free wheel
P
trr
DSS
GSS
I
Tj
SDS
DP
tr
tf
ISO
MOSFET MODULE
SF100CB100
D
D
T
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Source Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Isolation Voltage（R.M.S.）
Mounting
Torque
Mass
Gate Leakage Current
Zero Gate Voltage Drain Current
Darin-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Time
Diode Forward Voltage
Reverse Recovery Time
DSS
＝1000V
Item
Item
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
DC
Pulse
Mounting （M6）
Terminal（M6）
Terminal（M4）
Tc＝25℃
A.C. 1minute
Recommended Value 2.5-3.9（25-40）
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.0-1.4（10-14）
Typical Value
V
V
V
V
I
I
V
V
V
V
R
I
−I
−I
MOSFET
Diode
D
D
D
GS
GS
GS
DS
DS
GS
GS
GS
L
＝100A，V
＝100A，V
＝100A，R
＝6Ω，V
D
D
＝V
＝10A，V
＝±20V，V
＝0V，V
＝0V，I
＝0V，V
＝0V，V
＝0V，V
＝100A，V
＝100A，V
GS
，I
D
GS
DS
D
DS
DS
DS
＝1mA
GS
GS
G
＝10mA
D
＝15V/−5V
＝800V
＝25V，f＝1.0MHz
＝25V，f＝1.0MHz
＝25V，f＝1.0MHz
＝2.2Ω
GS
＝75A
＝15V
＝15V
GS
DS
Conditions
Conditions
＝15V，di/dt＝400A/ μs
＝0V
＝0V
S
D
（Tj＝25℃ unless otherwise specified）
（Tj＝25℃ unless otherwise specified）
2ｰM4
1000
Min.
1.5
S
30
24.0
2ｰM6
−40 to ＋150
−40 to ＋125
SF100CB100
4.7（48）
4.7（48）
1.5（15）
G
Ratings
Ratings
16000
21.0
1000
2500
2900
1800
±30
Typ.
100
200
100
800
460
108max
93±0.5
50
S
29.0
19200
Max.
UL;E76102 （ M）
±0.1
4200
2600
D
0.16
0.64
150
150
300
600
300
300
4.0
3.5
1.8
15
Unit：
（kgf･B）
4ｰ φ6.5
℃/W
N･m
Unit
Unit
mΩ
μA
mA
pF
pF
pF
℃
℃
ns
ns
W
A
A
S
V
V
V
g
V
V
V
V
A
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SF100CB100 Summary of contents
Page 1
... MOSFET MODULE SF100CB100 SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr ≦300ns ）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ＝100A, V ＝ ...
Page 2
... V 400V ２ １ 10 ５ ２ ０ １ ０ ５ ２ １ ０ ０ ０ １ ５ ０ ０ SF100CB100 Typical 50V V DS Pulse Test 25℃ 100℃ １ ２ ３ ４ ５ Gate-Source Voltage V （V） GS Channel Temperature ...
Page 3
... Max. Max. 50μsec∼50msec ５ ｍ １ ０ ｍ２ ０ ｍ ５ ０ ｍ ５ １ ０ SF100CB100 lrr lrr Qrr Qrr Typical dis/dt 100A/μs V −5V GS trr trr ...