ZLLS1000_06 Zetex Inc., ZLLS1000_06 Datasheet - Page 4

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ZLLS1000_06

Manufacturer Part Number
ZLLS1000_06
Description
40V Silicon HIGH Current LOW Leakage Schottky Diode
Manufacturer
Zetex Inc.
Datasheet
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
*Measured under pulsed conditions. Pulse width = 300µS. Duty Cycle
Operational Efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS Series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring Low voltage Low temperature operation will
benefit from
low V
ZLLS1000
SCHOTTKY DIODE CHARACTERISTICS
PARAMETER
Reverse breakdown voltage V
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
F
ZHCS
SYMBOL
V
I
C
t
Q
R
rr
(BR)R
F
D
rr
MIN.
40
TYP.
280
310
355
405
450
490
570
475
11
750
26
4
335
4
310
340
390
460
510
560
660
20
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
mV
pF
ns
nC
A
A
2%.
CONDITIONS
I
I
I
I
I
I
I
I
I
V
V
f=1MHz,VR=30V
Switched from
I
Measured @ I
Rsource = 6 ;Rload= 10
R
F
F
F
F
F
F
F
F
F
di /d t = 500mA/ ns.
=50 mA*
=100 mA*
=250mA*
=500mA*
=750mA*
=1A*
=1.5A*
=1000mA*,Ta = 100 C
R
R
=500µA
= 500mA to V
=30V
=30V,Ta = 85 C
ISSUE 3 - MAY 2006
R
50mA.
R
= 5.5V
using Zetex
Series diodes.

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