BST72A Philips Semiconductors (Acquired by NXP), BST72A Datasheet
BST72A
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BST72A Summary of contents
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... BST72A N-channel enhancement mode field-effect transistor Rev. 03 — 25 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BST72A in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator ...
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... Figure 2 amb pulsed amb p Figure Figure 1 amb amb pulsed amb p Rev. 03 — 25 July 2000 BST72A Typ Max Unit 100 V 190 mA 0.83 W 150 Min Max Unit 100 V 100 190 ...
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... T amb ( der Fig 2. Normalized continuous drain current as a function of ambient temperature. R DSon = D. Rev. 03 — 25 July 2000 BST72A 03aa19 120 I der 100 (%) 100 125 150 T amb ( ...
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... Z th(j-a) (K/ 0.2 0.1 10 0.05 0.02 single pulse Vertical in still air. duration. Rev. 03 — 25 July 2000 BST72A Value 150 Figure 4 03aa59 (s) © Philips Electronics N.V. 2000. All rights reserved. Unit K ...
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... 300 mA Figure 300 mA /dt = 100 Rev. 03 — 25 July 2000 BST72A Typ Max Unit 130 3.5 V 0.01 1 100 350 ...
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... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa64 10V 0.3 0 --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 03 — 25 July 2000 BST72A 03aa65 0 > DSon (A) 0.6 0 0.4 150 o C 0.3 0.2 0 ...
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... C iss , C oss , rss (pF) 150 o C 0.5 0 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 03 — 25 July 2000 BST72A 03aa37 ( min typ 0 ...
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... Product specification N-channel enhancement mode field-effect transistor 0 (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0 and 150 voltage; typical values. Rev. 03 — 25 July 2000 BST72A 03aa67 150 0.6 0.8 1 1.2 1 (V) © Philips Electronics N.V. 2000. All rights reserved ...
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... Product specification N-channel enhancement mode field-effect transistor 2 scale 4.8 1.7 4.2 14.5 2.54 1.27 4.4 1.4 3.6 12.7 REFERENCES JEDEC EIAJ TO-92 SC-43 Rev. 03 — 25 July 2000 BST72A ( 2.5 EUROPEAN ISSUE DATE PROJECTION 97-02-28 © Philips Electronics N.V. 2000. All rights reserved. SOT54 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000725 HZG330 Product specification; third version; supersedes BST72A_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS™ (Hazel Grove) technology. 02 19970623 - Product specification; second version. 01 19901031 - Product specification; initial version. ...
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... Rev. 03 — 25 July 2000 BST72A Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 03 — 25 July 2000 BST72A © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 July 2000 Document order number: 9397 750 07296 N-channel enhancement mode field-effect transistor Printed in The Netherlands BST72A ...