2N5109J Semicoa Semiconductors, 2N5109J Datasheet
2N5109J
Manufacturer Part Number
2N5109J
Description
Package = TO-39 ;; Level = Jans ;; Vceo (V) = 20 ;; Vcbo (V) = 40 ;; Vebo (V) = 3.0 ;; Ic (A) = 0.40 ;; Power (W) ta = 1 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat) (V) = 0.50
Manufacturer
Semicoa Semiconductors
Datasheet
1.2N5109J.pdf
(2 pages)
Copyright 2002
Rev. D
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500
• JAN level (2N5109J)
• JANTX level (2N5109JX)
• JANTXV level (2N5109JV)
• JANS level (2N5109JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
• Radiation testing (total dose) upon request
Absolute Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
Derate linearly above 25°C
Power Dissipation, T
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
2072 for JANTXV and JANS
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
A
C
Parameter
= 25°C
= 25°C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Semicoa Semiconductors, Inc.
www.SEMICOA.com
Appendix E
Symbol
V
V
V
R
T
P
P
T
I
CEO
CBO
EBO
STG
θJA
C
T
T
J
Applications
• General purpose
• VHF-UHF amplifier transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 1009
• Reference document:
Benefits
• Qualification Levels: JAN, JANTX,
• Radiation testing available
MIL-PRF-19500/453
JANTXV and JANS
T
C
-65 to +200
-65 to +200
= 25°C unless otherwise specified
Rating
5.71
16.6
400
175
2.9
20
40
3
1
Silicon NPN Transistor
2N5109
D a t a S h e e t
mW/°C
mW/°C
°C/W
Volts
Volts
Volts
Unit
mA
°C
°C
W
W
Page 1 of 2
Related parts for 2N5109J
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANSISTOR
Manufacturer:
SEMICOA
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Package = TO-18 ;; Level = Jans ;; Vceo (V) = 20 ;; Vcbo (V) = 40 ;; Vebo (V) = 6.0 ;; Ic (A) = 0.20 ;; Power (W) ta = 0.36 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat) (V) = 0.20
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Package = Cersot ;; Level = Jans ;; Vceo (V) = 80 ;; Vcbo (V) = 140 ;; Vebo (V) = 7.0 ;; Ic (A) = 1.00 ;; Power (W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Chip Type 2C3019 Geometry 4500 Polarity PNP
Manufacturer:
SEMICOA [Semicoa Semiconductor]
Datasheet:
Part Number:
Description:
Chip Type 2C3866A Geometry 1007 Polarity NPN
Manufacturer:
SEMICOA [Semicoa Semiconductor]
Datasheet:
Part Number:
Description:
Chip Type 2C3960 Geometry 0003 Polarity NPN
Manufacturer:
SEMICOA [Semicoa Semiconductor]
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
Part Number:
Description:
Manufacturer:
Semicoa Semiconductors
Datasheet:
2N5109J Summary of contents
Page 1
... Screening and processing per MIL-PRF-19500 • JAN level (2N5109J) • JANTX level (2N5109JX) • JANTXV level (2N5109JV) • JANS level (2N5109JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www ...
Page 2
... 200 MHz - Volts mA MHz < f < 216 MHz -10dB in Semicoa Semiconductors, Inc. www.SEMICOA.com 2N5109 Silicon NPN Transistor characteristics specified at T Min Typ Max Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% ...