BFR181T Infineon Technologies Corporation, BFR181T Datasheet

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BFR181T

Manufacturer Part Number
BFR181T
Description
Rf-bipolar NPN Type Transistors With Transition Frequency of 8 GHZ
Manufacturer
Infineon Technologies Corporation
Datasheet
NPN Silicon RF Transistor
Preliminary data


ESD: Electrostatic discharge sensitive device, observe handling precaution!
Thermal Resistance
Type
BFR181T
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Junction - soldering point
1 T
2 For calculation of R
For low noise, high-gain broadband amplifiers at
f
S
collector currents from 0.5 mA to 12 mA
F = 1.45 dB at 900 MHz
T
S

= 8 GHz
is measured on the collector lead at the soldering point to the pcb
79°C
1)
thJA
please refer to Application Note Thermal Resistance
Marking
RFs
2)
1 = B
Pin Configuration
1
2 = E
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
thJS
j
A
stg
CEO
CES
CBO
EBO
tot
3 = C
3
-65 ... 150
-65 ... 150
Value

175
150
12
20
20
20
405
2
2
Package
SC75
1
Aug-09-2001
BFR181T
VPS05996
Unit
V
mA
mW
°C
K/W
2

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BFR181T Summary of contents

Page 1

... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFR181T VPS05996 Package SC75 Value Unit 175 mW 150 °C -65 ... 150 -65 ... 150  K/W 405 Aug-09-2001 ...

Page 2

... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFR181T Values Unit min. typ. max 100 µ 100 µA 50 100 200 - Aug-09-2001 ...

Page 3

... MHz f = 1.8 GHz (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt Sopt L Lopt |S 21e = 1 BFR181T Values min. typ. max 0.26 0 10.5 Aug-09-2001 Unit GHz pF dB ...

Page 4

... MJE = 0.43619 - VTF = 0.12571 deg CJC = 319.69 - XCJC = 0.082903 fF VJS = 0. 1.11 - TNOM 300 L = 0.762 0.706 0.382 180 Valid up to 6GHz Aug-09-2001 BFR181T - ...

Page 5

... S 120 °C 100 150 T S Permissible Pulse Load = thJS p P totmax BFR181T / totDC p 2 D=0 0.005 1 0.01 0.02 0.05 0.1 0.2 0 Aug-09-2001 - ...

Page 6

... Transition frequency Parameter CE GHz Power Gain 1.8GHz V = Parameter CE 15 10V 0. BFR181T = f Aug-09-2001 10V ...

Page 7

... V = Parameter 900MHz CE 22 dBm 0.9GHz 14 0.9GHz 1.8GHz 10 6 1.8GHz Power Gain | dBm 10V GHz BFR181T =Z = f(f) 21 Parameter I =5mA Aug-09-2001 =f ...

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