BFR280 Infineon Technologies Corporation, BFR280 Datasheet - Page 3

• Manufacturer Part Number: BFR280
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
AC characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum stable
I
f = 900 MHz
f = 1.8 GHz
1
C
C
C
C
G
CB
CE
EB
= 6 mA, V
= 1.5 mA, V
= 3 mA, V
= 3 mA, V
ms
= 0.5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= |S
21
CE
CE
CE
/ S
CE
12
= 5 V, f = 500 MHz
= 5 V, Z
= 5 V, Z
= 5 V, Z
|
(verified by random sampling)
S
S
S
= Z
= Z
= Z
L
Sopt
1)
= 50
Sopt
A
, Z
= 25°C, unless otherwise specified.

,
L
,
= Z
Lopt
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ms
21e
|
2
min.
5
-
-
-
-
-
-
-
-
-
Values
11.5
0.27
0.18
0.22
typ.
7.5
1.5
17
13
2
8
max.
0.45
Jun-27-2001
-
-
-
-
-
-
-
-
-
BFR280
Unit
GHz
pF
dB