BFR35APE6327 Infineon Technologies Corporation, BFR35APE6327 Datasheet
BFR35APE6327
Manufacturer Part Number
BFR35APE6327
Description
NPN Silicon RF Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BFR35APE6327.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFR35APE6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR35AP
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
S
For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents
from 0.5mA to 20 mA
S
is measured on the collector lead at the soldering point to the pcb
4 8°C
thJA
please refer to Application Note Thermal Resistance
1)
2)
Marking
GEs
1 = B
1
Pin Configuration
Symbol
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
j
A
stg
thJS
CEO
CES
CBO
EBO
tot
2 = E
3 = C
3
-65 ... 150
-65 ... 150
Value
Value
280
150
2.5
3 65
15
20
20
30
4
Package
SOT23
1
Aug-01-2001
BFR35AP
VPS05161
Unit
K/W
Unit
V
mA
mW
°C
2
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BFR35APE6327 Summary of contents
Page 1
NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...
Page 2
Electrical Characteristics Parameter Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector -base cutoff current ...
Page 3
Electrical Characteristics Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector emitter capacitance ...