BFR93AE6327 Infineon Technologies Corporation, BFR93AE6327 Datasheet

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NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at
collector currents from ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Marking BFR93A R2s Maximum Ratings Parameter Collector-emitter ...

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Electrical Characteristics at T Parameter DC characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

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Electrical Characteristics at T Parameter AC characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

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SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA VAF = 20.011 1.5466 - VAR = 26.834 1.95 - RBM = 3.4649
CJE = 3.1538 fF TF ...

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Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load K 0.5 0.2 0 0.05 0.02 0.01 0.005 ...

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Collector-base capacitance 1MHz 1.5 pF 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Power Gain f 0.9GHz V = Parameter ...

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Power Gain f f Parameter 16 I =30mA Power Gain ...